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@ARTICLE{Meier:6109,
      author       = {Meier, M. and Gilles, S. and Rosezin, R. and Schindler, S.
                      and Trellenkamp, S. and Rüdiger, A. and Mayer, D. and
                      Kügeler, C. and Waser, R.},
      title        = {{R}esistively switching {P}t/{S}pin-on glass/{A}g nanocells
                      for non-volatile memories fabricated with {UV} nanoimprint
                      lithography},
      journal      = {Microelectronic engineering},
      volume       = {86},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-6109},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Resistively switching materials are in the focus of
                      investigations for use in next-generation non-volatile
                      resistive random access memories (RRAM). Crossbar structures
                      with integrated resistively switching spin-on glass were
                      fabricated using UV nanoimprint lithography. 32 x 32 bit
                      crossbar arrays with a half pitch of 50 nm were achieved.
                      The switching characteristic of our Pt/spin-on glass/Ag
                      material stack was proved on 100 x 100 nm(2) nanocells. It
                      shows resistance switching behavior which is comparable to
                      material systems where the formation and dissolution of
                      metallic filaments through a porous matrix is assumed to be
                      the responsible switching mechanism. (C) 2009 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / IBN-2 / JARA-FIT / IBN-PT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)IBN-2-20090406 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)VDB554},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Optics / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000267273300158},
      doi          = {10.1016/j.mee.2009.01.054},
      url          = {https://juser.fz-juelich.de/record/6109},
}