TY  - JOUR
AU  - Ellerkmann, U.
AU  - Schneller, T.
AU  - Nauenheim, C.
AU  - Böttger, U.
AU  - Waser, R.
TI  - Reduction of film thickness for chemical solution deposited PbZr0.3Ti0.7O3 thin films revealing no size effects and maintaining high remanent polarization and low coercive field
JO  - Thin solid films
VL  - 516
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-61128
SP  - 4713 - 4719
PY  - 2008
N1  - Record converted from VDB: 12.11.2012
AB  - Polycrystalline Pb(Zr-0.3,Ti-0.7)O-3 (PZT) thin films were prepared on platinized silicon wafers by chemical solution deposition (CSD) with thicknesses down to 30 rim. Electrical measurements with the superior ferroelectric properties of high remanent polarization (P-r) and low coercive field (E-c) will be presented for thicknesses down to 50 nm. In order to decrease the thickness of electrically dense PZT thin films by the CSD method experiments have been performed by using different degrees of dilutions of the precursor stock solutions, i.e. instead of diluting the PZT stock solution with 2-butoxyethanol in the standard ratio of 1:1 before the spin-on process, the dilution is increased stepwise to a ratio of 1:4. In addition the films have been annealed in nitrogen atmosphere instead of the typical oxygen atmosphere which has been shown to strongly improve a preferential (111) orientation of the PZT film [G. J. Norga, L. Fe, Mat. Res. Soc. Symp. Proc. Vol. 655, CC9.1.1 (2001)]. The approach of Norga et al. is confirmed and complemented by means of electrical hysteresis measurements. (C) 2007 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000256509100010
DO  - DOI:10.1016/j.tsf.2007.08.073
UR  - https://juser.fz-juelich.de/record/61128
ER  -