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@ARTICLE{Ellerkmann:61128,
      author       = {Ellerkmann, U. and Schneller, T. and Nauenheim, C. and
                      Böttger, U. and Waser, R.},
      title        = {{R}eduction of film thickness for chemical solution
                      deposited {P}b{Z}r0.3{T}i0.7{O}3 thin films revealing no
                      size effects and maintaining high remanent polarization and
                      low coercive field},
      journal      = {Thin solid films},
      volume       = {516},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-61128},
      pages        = {4713 - 4719},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Polycrystalline Pb(Zr-0.3,Ti-0.7)O-3 (PZT) thin films were
                      prepared on platinized silicon wafers by chemical solution
                      deposition (CSD) with thicknesses down to 30 rim. Electrical
                      measurements with the superior ferroelectric properties of
                      high remanent polarization (P-r) and low coercive field
                      (E-c) will be presented for thicknesses down to 50 nm. In
                      order to decrease the thickness of electrically dense PZT
                      thin films by the CSD method experiments have been performed
                      by using different degrees of dilutions of the precursor
                      stock solutions, i.e. instead of diluting the PZT stock
                      solution with 2-butoxyethanol in the standard ratio of 1:1
                      before the spin-on process, the dilution is increased
                      stepwise to a ratio of 1:4. In addition the films have been
                      annealed in nitrogen atmosphere instead of the typical
                      oxygen atmosphere which has been shown to strongly improve a
                      preferential (111) orientation of the PZT film [G. J. Norga,
                      L. Fe, Mat. Res. Soc. Symp. Proc. Vol. 655, CC9.1.1 (2001)].
                      The approach of Norga et al. is confirmed and complemented
                      by means of electrical hysteresis measurements. (C) 2007
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000256509100010},
      doi          = {10.1016/j.tsf.2007.08.073},
      url          = {https://juser.fz-juelich.de/record/61128},
}