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@ARTICLE{Halder:61129,
      author       = {Halder, S. and Schneller, T. and Waser, R. and Majumber,
                      S.B.},
      title        = {{E}lectrical and optical properties of chemical solution
                      deposited barium hafnate titanate thin films},
      journal      = {Thin solid films},
      volume       = {516},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-61129},
      pages        = {4970 - 4976},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We have investigated the electrical and optical properties
                      of Ba(HfxTi1-x)O-3 (x = 0, 0.1, 0.2, 0.3, 0.4) (BHT) thin
                      films deposited on platinized silicon and fused quartz
                      substrates. Analyses of the X-ray diffraction patterns
                      reveal that with the increase in Hf contents there is a
                      systematic increase of the lattice constants of BHT films.
                      Irrespective of the measurement frequencies the dielectric
                      constants was found to be systematically decreased, whereas
                      their frequency dispersion was found to be reduced with
                      increasing Hf contents. The leakage current data measured
                      using a metal-insulator-metal configuration reveal that the
                      Schottky emission is the dominant leakage current mechanism
                      in these films. BHT films, deposited on transparent fused
                      quartz substrates, were also characterized in terms of their
                      optical properties. For this purpose the transmittance of
                      the undoped as well as Hf doped barium titanate thin films
                      was measured as a function of wavelength in the range of 290
                      nm to 800 nm. The transmission spectra were analysed to
                      estimate the wavelength dependence of the refractive
                      indices/extinction coefficients as well as the variation of
                      optical band gap of these films. With the increase of Hf
                      contents, a systematic increase of the band gap [from 3.65
                      eV (undoped film) to 4.15 eV (40 $at.\%$ Hf doped barium
                      titanate film)] was observed. The reduction of the leakage
                      current with increasing hafnium substitution is discussed on
                      the basis of an increasing Schottky barrier height and due
                      to a simultaneous increase in the band gap of the material.
                      (C) 2007 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000256509100049},
      doi          = {10.1016/j.tsf.2007.09.041},
      url          = {https://juser.fz-juelich.de/record/61129},
}