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| 001 | 61799 | ||
| 005 | 20180211165317.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1002/pssr.200802054 |
| 024 | 7 | _ | |2 WOS |a WOS:000257043400030 |
| 037 | _ | _ | |a PreJuSER-61799 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Schindler, C. |b 0 |u FZJ |0 P:(DE-Juel1)VDB61376 |
| 245 | _ | _ | |a Controlled local filament growth and dissolution in Ag-Ge-Se |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2008 |
| 300 | _ | _ | |a 129 - 131 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physica Status Solidi - Rapid Research Letters |x 1862-6254 |0 16681 |y 3 |v 2 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Memory cells based on the cation migration and filament formation and rupture in a solid electrolyte have attracted much interest due to low switching voltages and a prospective high scalability. In this study we indirectly visualized the growth and dissolution of the conductive filament in Ag-Ge-Se samples with Ag bottom electrodes by surface analysis with Conductive Atomic Force Microscopy (CAFM). By application of a negative voltage to the inert CAFM tip, conductive filaments were grown on the scanned area and they were dissolved under reversed bias. The local conductivity changes directly corresponded to changes in the topography, i.e. to the filament protrusion and dissolution. Topography changes could be circumvented by limiting the maximum current. By placing the CAFM tip on a random spot on the sample, filaments with a diameter as low as 20 nm were grown by local current-voltage measurements. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Szot, K. |b 1 |u FZJ |0 P:(DE-Juel1)VDB2799 |
| 700 | 1 | _ | |a Karthäuser, S. |b 2 |u FZJ |0 P:(DE-Juel1)130751 |
| 700 | 1 | _ | |a Waser, R. |b 3 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1002/pssr.200802054 |g Vol. 2, p. 129 - 131 |p 129 - 131 |q 2<129 - 131 |0 PERI:(DE-600)2259465-6 |t Physica status solidi / Rapid research letters |v 2 |y 2008 |x 1862-6254 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1002/pssr.200802054 |
| 909 | C | O | |o oai:juser.fz-juelich.de:61799 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2008 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0020 |a No peer review |
| 920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)97341 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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