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000006193 0247_ $$2ISSN$$a0096-4743
000006193 0247_ $$2ISSN$$a0096-4786
000006193 0247_ $$2ISSN$$a1945-7111
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000006193 041__ $$aeng
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000006193 084__ $$2WoS$$aElectrochemistry
000006193 084__ $$2WoS$$aMaterials Science, Coatings & Films
000006193 1001_ $$0P:(DE-Juel1)130570$$aBruchhaus, R.$$b0$$uFZJ
000006193 245__ $$aSelection of optimized materials for CBRAM based on HT-XRD and electrical test results
000006193 260__ $$aPennington, NJ$$bElectrochemical Society$$c2009
000006193 300__ $$aH729 - H 733
000006193 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000006193 440_0 $$03889$$aJournal of the Electrochemical Society$$v156$$x0013-4651$$y9
000006193 500__ $$aWe thank the Qimonda and Altis Semiconductor CBRAM development team for their contributions and work.
000006193 520__ $$aAmong emerging memory technologies that rely on the bistable change of a resistor, the conductive bridging random access memory (CBRAM) is of particular interest due to its excellent scaling potential into the sub-20 nm range and low power operation. This technology utilizes electrochemical redox reactions to form nanoscale metallic filaments in an isolating amorphous solid electrolyte. Ge chalcogenides are candidate materials for high performance solid electrolytes in combination with Ag as the preferred metal showing high mobility and switching speed. Due to the thermal budget for a back end of the line (BEOL) processing, the layer stack materials must withstand temperatures in the range of 300-450 degrees C. Pure GeS was stable up to 450 degrees C without crystallization. For GeSe, deleterious crystallization was observed. High temperature X-ray diffraction (HT-XRD) and electrical characterization with stepwise annealing were applied to characterize the thermal stability of Ag/GeSe and Ag/GeS material systems. The higher onset temperature for solid-state reactions found with HT-XRD in the Ag/GeS system is the key for the better electrical performance compared to the Ag/GeSe system. Even after thermal annealing with a peak temperature of 300 degrees C, excellent and stable yield numbers of more than 90% for memory elements were achieved for the sulfide, which qualifies this material system for a low temperature BEOL process.
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000006193 65320 $$2Author$$aannealing
000006193 65320 $$2Author$$acrystallisation
000006193 65320 $$2Author$$aelectrochemistry
000006193 65320 $$2Author$$aelectrolytes
000006193 65320 $$2Author$$agermanium compounds
000006193 65320 $$2Author$$aoxidation
000006193 65320 $$2Author$$arandom-access storage
000006193 65320 $$2Author$$areduction (chemical)
000006193 65320 $$2Author$$asilver
000006193 65320 $$2Author$$athermal stability
000006193 65320 $$2Author$$aX-ray diffraction
000006193 650_7 $$2WoSType$$aJ
000006193 7001_ $$0P:(DE-HGF)0$$aHonal, M.$$b1
000006193 7001_ $$0P:(DE-HGF)0$$aSymanczyk, R.$$b2
000006193 7001_ $$0P:(DE-HGF)0$$aKund, M.$$b3
000006193 773__ $$0PERI:(DE-600)2002179-3$$a10.1149/1.3160570$$gVol. 156, p. H729 - H 733$$pH729 - H 733$$q156<H729 - H 733$$tJournal of the Electrochemical Society$$v156$$x0013-4651$$y2009
000006193 8567_ $$uhttp://dx.doi.org/10.1149/1.3160570
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000006193 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
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