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@ARTICLE{Bruchhaus:6193,
      author       = {Bruchhaus, R. and Honal, M. and Symanczyk, R. and Kund, M.},
      title        = {{S}election of optimized materials for {CBRAM} based on
                      {HT}-{XRD} and electrical test results},
      journal      = {Journal of the Electrochemical Society},
      volume       = {156},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-6193},
      pages        = {H729 - H 733},
      year         = {2009},
      note         = {We thank the Qimonda and Altis Semiconductor CBRAM
                      development team for their contributions and work.},
      abstract     = {Among emerging memory technologies that rely on the
                      bistable change of a resistor, the conductive bridging
                      random access memory (CBRAM) is of particular interest due
                      to its excellent scaling potential into the sub-20 nm range
                      and low power operation. This technology utilizes
                      electrochemical redox reactions to form nanoscale metallic
                      filaments in an isolating amorphous solid electrolyte. Ge
                      chalcogenides are candidate materials for high performance
                      solid electrolytes in combination with Ag as the preferred
                      metal showing high mobility and switching speed. Due to the
                      thermal budget for a back end of the line (BEOL) processing,
                      the layer stack materials must withstand temperatures in the
                      range of 300-450 degrees C. Pure GeS was stable up to 450
                      degrees C without crystallization. For GeSe, deleterious
                      crystallization was observed. High temperature X-ray
                      diffraction (HT-XRD) and electrical characterization with
                      stepwise annealing were applied to characterize the thermal
                      stability of Ag/GeSe and Ag/GeS material systems. The higher
                      onset temperature for solid-state reactions found with
                      HT-XRD in the Ag/GeS system is the key for the better
                      electrical performance compared to the Ag/GeSe system. Even
                      after thermal annealing with a peak temperature of 300
                      degrees C, excellent and stable yield numbers of more than
                      $90\%$ for memory elements were achieved for the sulfide,
                      which qualifies this material system for a low temperature
                      BEOL process.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000268405400057},
      doi          = {10.1149/1.3160570},
      url          = {https://juser.fz-juelich.de/record/6193},
}