001     62874
005     20240610121313.0
024 7 _ |a 10.1063/1.2945640
|2 DOI
024 7 _ |a WOS:000256934900042
|2 WOS
024 7 _ |a 2128/17386
|2 Handle
037 _ _ |a PreJuSER-62874
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Shibuya, K.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB68382
245 _ _ |a Sr2TiO4 layered perovskite thin films grown by pulsed laser deposition
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2008
300 _ _ |a 241918
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 92
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have fabricated epitaxial Sr2TiO4 thin films on SrTiO3 (100) single crystal substrates by pulsed laser deposition. We demonstrate that growth parameters including substrate temperature, oxygen pressure, as well as the laser fluence have to be chosen precisely to obtain stoichiometric well-ordered films of this complex layered structure. Films grown at low temperature showed three-dimensional random distribution of SrO double layers, causing a new extinction rule in x-ray diffraction. Stoichiometric Sr2TiO4 films with well-ordered SrO double layers were fabricated at higher temperature and under low oxygen pressures, where thermal energy was sufficient to compensate local composition fluctuation and Sr deficiency was very small. (C) 2008 American Institute of Physics.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Mi, S.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB5304
700 1 _ |a Jia, C. L.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB5020
700 1 _ |a Meuffels, P.
|b 3
|u FZJ
|0 P:(DE-Juel1)130836
700 1 _ |a Dittmann, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5464
773 _ _ |a 10.1063/1.2945640
|g Vol. 92, p. 241918
|p 241918
|q 92<241918
|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 92
|y 2008
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.2945640
856 4 _ |u https://juser.fz-juelich.de/record/62874/files/1.2945640.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/62874/files/1.2945640.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/62874/files/1.2945640.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/62874/files/1.2945640.jpg?subformat=icon-700
|x icon-700
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/62874/files/1.2945640.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:62874
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2008
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
920 1 _ |d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |d 31.12.2010
|g IFF
|k IFF-8
|l Mikrostrukturforschung
|0 I:(DE-Juel1)VDB788
|x 1
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 2
970 _ _ |a VDB:(DE-Juel1)99762
980 1 _ |a FullTexts
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)PGI-5-20110106
981 _ _ |a I:(DE-Juel1)VDB881


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21