001     62880
005     20180211165435.0
024 7 _ |2 DOI
|a 10.1080/10584580802096671
024 7 _ |2 WOS
|a WOS:000257113500002
037 _ _ |a PreJuSER-62880
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Dippel, A. C.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Thin films of undoped lead titanate: Morphology and electrical properties
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2008
300 _ _ |a 3 - 10
336 7 _ |a Journal Article
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Integrated Ferroelectrics
|x 1058-4587
|0 2659
|v 98
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The synthesis of lead titanate thin films by two different chemical solution deposition routes and via nanoparticle dispersions is described. The differences in decomposition kinetics of the solutions were determined and correlated to the morphology evolution and ferroelectric characteristics of the deposited films. High remanent polarisation values of up to 55 mu C cm(-2) were obtained by the sol-gel method as well as the nanoparticle dispersion technique. Measurements of the dielectric properties of the films revealed low leakage current densities in the range of 10(-6) A cm(-2) and a maximum dielectric constant of similar to 360.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
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|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a lead titanate
653 2 0 |2 Author
|a ferroelectric thin films
653 2 0 |2 Author
|a Kissinger analysis
653 2 0 |2 Author
|a activation energy
653 2 0 |2 Author
|a morphology control
700 1 _ |a Schneller, T.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 2
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1080/10584580802096671
|g Vol. 98, p. 3 - 10
|p 3 - 10
|q 98<3 - 10
|0 PERI:(DE-600)2037916-X
|t Integrated ferroelectrics
|v 98
|y 2008
|x 1058-4587
856 7 _ |u http://dx.doi.org/10.1080/10584580802096671
909 C O |o oai:juser.fz-juelich.de:62880
|p VDB
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2008
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)99784
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB881


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