Home > Publications database > Thin films of undoped lead titanate: Morphology and electrical properties > print |
001 | 62880 | ||
005 | 20180211165435.0 | ||
024 | 7 | _ | |2 DOI |a 10.1080/10584580802096671 |
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037 | _ | _ | |a PreJuSER-62880 |
041 | _ | _ | |a eng |
082 | _ | _ | |a 620 |
084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
084 | _ | _ | |2 WoS |a Physics, Applied |
084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
100 | 1 | _ | |a Dippel, A. C. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a Thin films of undoped lead titanate: Morphology and electrical properties |
260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2008 |
300 | _ | _ | |a 3 - 10 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 98 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a The synthesis of lead titanate thin films by two different chemical solution deposition routes and via nanoparticle dispersions is described. The differences in decomposition kinetics of the solutions were determined and correlated to the morphology evolution and ferroelectric characteristics of the deposited films. High remanent polarisation values of up to 55 mu C cm(-2) were obtained by the sol-gel method as well as the nanoparticle dispersion technique. Measurements of the dielectric properties of the films revealed low leakage current densities in the range of 10(-6) A cm(-2) and a maximum dielectric constant of similar to 360. |
536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
588 | _ | _ | |a Dataset connected to Web of Science |
650 | _ | 7 | |a J |2 WoSType |
653 | 2 | 0 | |2 Author |a lead titanate |
653 | 2 | 0 | |2 Author |a ferroelectric thin films |
653 | 2 | 0 | |2 Author |a Kissinger analysis |
653 | 2 | 0 | |2 Author |a activation energy |
653 | 2 | 0 | |2 Author |a morphology control |
700 | 1 | _ | |a Schneller, T. |b 1 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Waser, R. |b 2 |u FZJ |0 P:(DE-Juel1)131022 |
773 | _ | _ | |a 10.1080/10584580802096671 |g Vol. 98, p. 3 - 10 |p 3 - 10 |q 98<3 - 10 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 98 |y 2008 |x 1058-4587 |
856 | 7 | _ | |u http://dx.doi.org/10.1080/10584580802096671 |
909 | C | O | |o oai:juser.fz-juelich.de:62880 |p VDB |
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914 | 1 | _ | |y 2008 |
915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
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980 | _ | _ | |a UNRESTRICTED |
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