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000062881 084__ $$2WoS$$aEngineering, Electrical & Electronic
000062881 084__ $$2WoS$$aNanoscience & Nanotechnology
000062881 084__ $$2WoS$$aOptics
000062881 084__ $$2WoS$$aPhysics, Applied
000062881 1001_ $$0P:(DE-Juel1)VDB55622$$aMeier, M.$$b0$$uFZJ
000062881 245__ $$aNanoimprint for future non-volatile memory and logic devices
000062881 260__ $$a[S.l.] @$$bElsevier$$c2008
000062881 300__ $$a870 - 872
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000062881 520__ $$aNanoimprint lithography (NIL) is used to realize next generation memory and logic devices. The simple device structure consists of a resistance switching material sandwiched between two metal nanoelectrodes. Bottom and top electrodes are aligned perpendicular to each other building a crossbar array structure. A significant advantage of these future devices in addition to its simplicity is the high integration density. Crossbar arrays with 200 nm electrodes and single cross junctions with 30 nm electrodes were achieved using UV NIL. The bottom electrodes were embedded and planarized by spin on glass, such that an even surface for the realization of the top electrodes by UV NIL could be obtained. Finally electrical measurements demonstrated the function of the fabricated devices. (c) 2008 Elsevier B.V. All rights reserved.
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000062881 65320 $$2Author$$ananoimprint lithography
000062881 65320 $$2Author$$acrossbar array
000062881 65320 $$2Author$$amemory and logic devices
000062881 7001_ $$0P:(DE-Juel1)VDB61380$$aNauenheim, C.$$b1$$uFZJ
000062881 7001_ $$0P:(DE-Juel1)VDB67357$$aGilles, S.$$b2$$uFZJ
000062881 7001_ $$0P:(DE-Juel1)128707$$aMayer, D.$$b3$$uFZJ
000062881 7001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b4$$uFZJ
000062881 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
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000062881 8567_ $$uhttp://dx.doi.org/10.1016/j.mee.2008.01.101
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