000062958 001__ 62958
000062958 005__ 20200423204622.0
000062958 0247_ $$2DOI$$a10.1063/1.2968660
000062958 0247_ $$2WOS$$aWOS:000258335900049
000062958 0247_ $$2Handle$$a2128/17367
000062958 037__ $$aPreJuSER-62958
000062958 041__ $$aeng
000062958 082__ $$a530
000062958 084__ $$2WoS$$aPhysics, Applied
000062958 1001_ $$0P:(DE-Juel1)156578$$aDurgun Özben, E.$$b0$$uFZJ
000062958 245__ $$aSmScO3 thin films as an alternative gate dielectric
000062958 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2008
000062958 300__ $$a052902-1 - 052902-3
000062958 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000062958 3367_ $$2DataCite$$aOutput Types/Journal article
000062958 3367_ $$00$$2EndNote$$aJournal Article
000062958 3367_ $$2BibTeX$$aARTICLE
000062958 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000062958 3367_ $$2DRIVER$$aarticle
000062958 440_0 $$0562$$aApplied Physics Letters$$v93$$x0003-6951
000062958 500__ $$aRecord converted from VDB: 12.11.2012
000062958 520__ $$aSamarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and transmission electron microscopy results show that the films are stoichiometric, amorphous, and smooth. X-ray diffraction analysis indicates that SmScO3 starts to crystallize at 900 degrees C. Capacitance and leakage current measurements reveal C-V curves with negligible hysteresis, a dielectric constant around 29 for 6 nm thick films, low leakage current densities in the range of 10(-7) A/cm(2), an effective oxide charge density of similar to 5x10(11) cm(-2), and an interface trap density of 4.5x10(11) (eV cm(2))(-1). (C) 2008 American Institute of Physics.
000062958 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000062958 588__ $$aDataset connected to Web of Science
000062958 650_7 $$2WoSType$$aJ
000062958 7001_ $$0P:(DE-Juel1)VDB64746$$aLopes, J. M. J.$$b1$$uFZJ
000062958 7001_ $$0P:(DE-Juel1)VDB64142$$aRoeckerath, M.$$b2$$uFZJ
000062958 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b3$$uFZJ
000062958 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b4$$uFZJ
000062958 7001_ $$0P:(DE-HGF)0$$aJia, Y.$$b5
000062958 7001_ $$0P:(DE-HGF)0$$aSchlom, D. G.$$b6
000062958 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$uFZJ
000062958 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b8$$uFZJ
000062958 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.2968660$$gVol. 93, p. 052902-1 - 052902-3$$p052902-1 - 052902-3$$q93<052902-1 - 052902-3$$tApplied physics letters$$v93$$x0003-6951$$y2008
000062958 8567_ $$uhttp://dx.doi.org/10.1063/1.2968660
000062958 8564_ $$uhttps://juser.fz-juelich.de/record/62958/files/1.2968660.pdf$$yOpenAccess
000062958 8564_ $$uhttps://juser.fz-juelich.de/record/62958/files/1.2968660.gif?subformat=icon$$xicon$$yOpenAccess
000062958 8564_ $$uhttps://juser.fz-juelich.de/record/62958/files/1.2968660.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000062958 8564_ $$uhttps://juser.fz-juelich.de/record/62958/files/1.2968660.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000062958 8564_ $$uhttps://juser.fz-juelich.de/record/62958/files/1.2968660.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000062958 909CO $$ooai:juser.fz-juelich.de:62958$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000062958 9141_ $$y2008
000062958 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000062958 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000062958 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000062958 9201_ $$0I:(DE-Juel1)VDB799$$d31.12.2010$$gIBN$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
000062958 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000062958 970__ $$aVDB:(DE-Juel1)99960
000062958 980__ $$aVDB
000062958 980__ $$aConvertedRecord
000062958 980__ $$ajournal
000062958 980__ $$aI:(DE-Juel1)PGI-9-20110106
000062958 980__ $$aI:(DE-Juel1)VDB381
000062958 980__ $$aUNRESTRICTED
000062958 9801_ $$aFullTexts
000062958 981__ $$aI:(DE-Juel1)PGI-9-20110106
000062958 981__ $$aI:(DE-Juel1)VDB381