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@ARTICLE{Durgunzben:62958,
      author       = {Durgun Özben, E. and Lopes, J. M. J. and Roeckerath, M.
                      and Lenk, S. and Holländer, B. and Jia, Y. and Schlom, D.
                      G. and Schubert, J. and Mantl, S.},
      title        = {{S}m{S}c{O}3 thin films as an alternative gate dielectric},
      journal      = {Applied physics letters},
      volume       = {93},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-62958},
      pages        = {052902-1 - 052902-3},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Samarium scandate thin films deposited on (100) Si have
                      been investigated structurally and electrically. Rutherford
                      backscattering spectrometry and transmission electron
                      microscopy results show that the films are stoichiometric,
                      amorphous, and smooth. X-ray diffraction analysis indicates
                      that SmScO3 starts to crystallize at 900 degrees C.
                      Capacitance and leakage current measurements reveal C-V
                      curves with negligible hysteresis, a dielectric constant
                      around 29 for 6 nm thick films, low leakage current
                      densities in the range of 10(-7) A/cm(2), an effective oxide
                      charge density of similar to 5x10(11) cm(-2), and an
                      interface trap density of 4.5x10(11) (eV cm(2))(-1). (C)
                      2008 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000258335900049},
      doi          = {10.1063/1.2968660},
      url          = {https://juser.fz-juelich.de/record/62958},
}