000006319 001__ 6319
000006319 005__ 20180208220417.0
000006319 0247_ $$2DOI$$a10.1002/pssr.200903347
000006319 0247_ $$2WOS$$aWOS:000275226400015
000006319 037__ $$aPreJuSER-6319
000006319 041__ $$aeng
000006319 082__ $$a530
000006319 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000006319 084__ $$2WoS$$aPhysics, Applied
000006319 084__ $$2WoS$$aPhysics, Condensed Matter
000006319 1001_ $$0P:(DE-Juel1)VDB64025$$aMünstermann, R.$$b0$$uFZJ
000006319 245__ $$aMorphological and electical changes in TiO2 memristive devices induced by elecroforming and switching
000006319 260__ $$aWeinheim$$bWiley-VCH$$c2010
000006319 300__ $$a
000006319 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000006319 3367_ $$2DataCite$$aOutput Types/Journal article
000006319 3367_ $$00$$2EndNote$$aJournal Article
000006319 3367_ $$2BibTeX$$aARTICLE
000006319 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000006319 3367_ $$2DRIVER$$aarticle
000006319 440_0 $$016681$$aPhysica Status Solidi - Rapid Research Letters$$v4$$x1862-6254$$y1
000006319 500__ $$aThis research was funded in part by the US Government's Nano-Enabled Technology Initiative.
000006319 520__ $$aCombining delamination technique with conductive AFM, we have been able to reveal spatially resolved morphology and conductance changes in TiO2 memristive junctions after electroforming and switching. Being able to distingusish between effects caused by electroforming and switching, respectively, we could demonstrate that electroforming results in the creation of localized conductance channels induced by oxgen evolution while subsequent resistive switching causes an additional conducting structure next to the forming spot. We observe that the lateral extent of this structure depends on the number of switching cycles indicating an ongoing breaking of existing and creation of neighbouring current channels during subsequent switching.
000006319 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000006319 588__ $$aDataset connected to Web of Science
000006319 650_7 $$2WoSType$$aJ
000006319 7001_ $$0P:(DE-HGF)0$$aYang, J.J.$$b1
000006319 7001_ $$0P:(DE-HGF)0$$aStrachan, J.P.$$b2
000006319 7001_ $$0P:(DE-HGF)0$$aMedeiros-Ribeiro, G.$$b3
000006319 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b4$$uFZJ
000006319 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
000006319 773__ $$0PERI:(DE-600)2259465-6$$a10.1002/pssr.200903347$$gVol. 4$$q4$$tPhysica status solidi / Rapid research letters$$v4$$x1862-6254$$y2010
000006319 8567_ $$uhttp://dx.doi.org/10.1002/pssr.200903347
000006319 909CO $$ooai:juser.fz-juelich.de:6319$$pVDB
000006319 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000006319 9141_ $$y2010
000006319 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000006319 915__ $$0StatID:(DE-HGF)0020$$aNo peer review
000006319 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000006319 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000006319 970__ $$aVDB:(DE-Juel1)114526
000006319 980__ $$aVDB
000006319 980__ $$aConvertedRecord
000006319 980__ $$ajournal
000006319 980__ $$aI:(DE-Juel1)PGI-7-20110106
000006319 980__ $$aI:(DE-82)080009_20140620
000006319 980__ $$aUNRESTRICTED
000006319 981__ $$aI:(DE-Juel1)PGI-7-20110106
000006319 981__ $$aI:(DE-Juel1)VDB881