001     6319
005     20180208220417.0
024 7 _ |2 DOI
|a 10.1002/pssr.200903347
024 7 _ |2 WOS
|a WOS:000275226400015
037 _ _ |a PreJuSER-6319
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Münstermann, R.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB64025
245 _ _ |a Morphological and electical changes in TiO2 memristive devices induced by elecroforming and switching
260 _ _ |a Weinheim
|b Wiley-VCH
|c 2010
300 _ _ |a
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Physica Status Solidi - Rapid Research Letters
|x 1862-6254
|0 16681
|y 1
|v 4
500 _ _ |a This research was funded in part by the US Government's Nano-Enabled Technology Initiative.
520 _ _ |a Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved morphology and conductance changes in TiO2 memristive junctions after electroforming and switching. Being able to distingusish between effects caused by electroforming and switching, respectively, we could demonstrate that electroforming results in the creation of localized conductance channels induced by oxgen evolution while subsequent resistive switching causes an additional conducting structure next to the forming spot. We observe that the lateral extent of this structure depends on the number of switching cycles indicating an ongoing breaking of existing and creation of neighbouring current channels during subsequent switching.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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700 1 _ |a Yang, J.J.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Strachan, J.P.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Medeiros-Ribeiro, G.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Dittmann, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5464
700 1 _ |a Waser, R.
|b 5
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1002/pssr.200903347
|g Vol. 4
|q 4
|0 PERI:(DE-600)2259465-6
|t Physica status solidi / Rapid research letters
|v 4
|y 2010
|x 1862-6254
856 7 _ |u http://dx.doi.org/10.1002/pssr.200903347
909 C O |o oai:juser.fz-juelich.de:6319
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913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
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914 1 _ |y 2010
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |0 StatID:(DE-HGF)0020
|a No peer review
920 1 _ |d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
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|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
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981 _ _ |a I:(DE-Juel1)PGI-7-20110106
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