TY  - JOUR
AU  - Shtrikman, H.
AU  - Popovitz-Biro, R.
AU  - Kretinin, A.
AU  - Houben, L.
AU  - Heiblum, M.
AU  - Bukala, M.
AU  - Galicka, M.
AU  - Buczko, R.
AU  - Kacman, P.
TI  - Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires
JO  - Nano letters
VL  - 9
SN  - 1530-6984
CY  - Washington, DC
PB  - ACS Publ.
M1  - PreJuSER-7443
SP  - 1506 - 1510
PY  - 2009
N1  - The Warsaw group thanks EC network SemiSpinNet (PITN-GA-2008-215368) for support. All computations were carried out in Cl TASK in Gdansk. The transmission electron microscopy studies were conducted at the Irving and Cherna Moskowitz Center for Nano and BioNano Imaging at the Weizmann Institute of Science. The access to the high-resolution STEM instrumentation was provided by the Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons of the Research Centre Rilich. H.S. acknowledges fruitful discussions with Dr. Brent Wacaser.
AB  - The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:19253998
UR  - <Go to ISI:>//WOS:000265030000042
DO  - DOI:10.1021/nl803524s
UR  - https://juser.fz-juelich.de/record/7443
ER  -