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@ARTICLE{Shtrikman:7443,
      author       = {Shtrikman, H. and Popovitz-Biro, R. and Kretinin, A. and
                      Houben, L. and Heiblum, M. and Bukala, M. and Galicka, M.
                      and Buczko, R. and Kacman, P.},
      title        = {{M}ethod for {S}uppression of {S}tacking {F}aults in
                      {W}urtzite {III}-{V} {N}anowires},
      journal      = {Nano letters},
      volume       = {9},
      issn         = {1530-6984},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {PreJuSER-7443},
      pages        = {1506 - 1510},
      year         = {2009},
      note         = {The Warsaw group thanks EC network SemiSpinNet
                      (PITN-GA-2008-215368) for support. All computations were
                      carried out in Cl TASK in Gdansk. The transmission electron
                      microscopy studies were conducted at the Irving and Cherna
                      Moskowitz Center for Nano and BioNano Imaging at the
                      Weizmann Institute of Science. The access to the
                      high-resolution STEM instrumentation was provided by the
                      Ernst-Ruska Centre for Microscopy and Spectroscopy with
                      Electrons of the Research Centre Rilich. H.S. acknowledges
                      fruitful discussions with Dr. Brent Wacaser.},
      abstract     = {The growth of wurtzite GaAs and InAs nanowires with
                      diameters of a few tens of nanometers with negligible
                      intermixing of zinc blende stacking is reported. The
                      suppression of the number of stacking faults was obtained by
                      a procedure within the vapor-liquid-solid growth, which
                      exploits the theoretical result that nanowires of small
                      diameter ( approximately 10 nm) adopt purely wurtzite
                      structure and are observed to thicken (via lateral growth)
                      once the axial growth exceeds a certain length.},
      keywords     = {J (WoSType)},
      cin          = {IFF-8},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB788},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      SEMISPINNET - Initial Training Network in Nanoscale
                      Semiconductor Spintronics (215368)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)215368},
      shelfmark    = {Chemistry, Multidisciplinary / Chemistry, Physical /
                      Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:19253998},
      UT           = {WOS:000265030000042},
      doi          = {10.1021/nl803524s},
      url          = {https://juser.fz-juelich.de/record/7443},
}