Home > Publications database > Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires > print

001     7443
005     20240610115845.0
024 7 _ |2 pmid
|a pmid:19253998
024 7 _ |2 DOI
|a 10.1021/nl803524s
024 7 _ |2 WOS
|a WOS:000265030000042
037 _ _ |a PreJuSER-7443
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Multidisciplinary
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Nanoscience & Nanotechnology
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Shtrikman, H.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires
260 _ _ |a Washington, DC
|b ACS Publ.
|c 2009
300 _ _ |a 1506 - 1510
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Nano Letters
|x 1530-6984
|0 13841
|y 4
|v 9
500 _ _ |a The Warsaw group thanks EC network SemiSpinNet (PITN-GA-2008-215368) for support. All computations were carried out in Cl TASK in Gdansk. The transmission electron microscopy studies were conducted at the Irving and Cherna Moskowitz Center for Nano and BioNano Imaging at the Weizmann Institute of Science. The access to the high-resolution STEM instrumentation was provided by the Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons of the Research Centre Rilich. H.S. acknowledges fruitful discussions with Dr. Brent Wacaser.
520 _ _ |a The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|0 G:(DE-Juel1)FUEK412
|c P42
|2 G:(DE-HGF)
|x 0
536 _ _ |a SEMISPINNET - Initial Training Network in Nanoscale Semiconductor Spintronics (215368)
|0 G:(EU-Grant)215368
|c 215368
|x 1
|f FP7-PEOPLE-2007-1-1-ITN
588 _ _ |a Dataset connected to Web of Science, Pubmed
650 _ 7 |a J
|2 WoSType
700 1 _ |a Popovitz-Biro, R.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Kretinin, A.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Houben, L.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB4944
700 1 _ |a Heiblum, M.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Bukala, M.
|b 5
|0 P:(DE-HGF)0
700 1 _ |a Galicka, M.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Buczko, R.
|b 7
|0 P:(DE-HGF)0
700 1 _ |a Kacman, P.
|b 8
|0 P:(DE-HGF)0
773 _ _ |a 10.1021/nl803524s
|g Vol. 9, p. 1506 - 1510
|p 1506 - 1510
|q 9<1506 - 1510
|0 PERI:(DE-600)2048866-X
|t Nano letters
|v 9
|y 2009
|x 1530-6984
856 7 _ |u http://dx.doi.org/10.1021/nl803524s
909 C O |o oai:juser.fz-juelich.de:7443
|p openaire
|p VDB
|p ec_fundedresources
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|k P42
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|0 G:(DE-Juel1)FUEK412
|v Grundlagen für zukünftige Informationstechnologien
|x 0
914 1 _ |y 2009
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-8
|l Mikrostrukturforschung
|d 31.12.2010
|g IFF
|0 I:(DE-Juel1)VDB788
|x 0
970 _ _ |a VDB:(DE-Juel1)116071
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209
981 _ _ |a I:(DE-Juel1)PGI-5-20110106

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