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@ARTICLE{zdogan:756,
      author       = {Özdogan, K. and Sasioglu, E. and Galanakis, I.},
      title        = {{E}ngineering the electronic, magnetic, and gap-related
                      properties of the quinternary half-metallic {H}eusler
                      alloys},
      journal      = {Journal of applied physics},
      volume       = {103},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-756},
      pages        = {023503},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We study the electronic and magnetic properties of the
                      quinternary full Heusler alloys of the type
                      Co-2[Cr1-xMnx][Al1-ySiy] employing three different
                      approaches: (i) the coherent potential approximation; (ii)
                      the virtual crystal approximation; and (iii) supercell
                      calculations. All three methods give similar results, and
                      the local environment manifests itself only for small
                      details of the density of states. All alloys under study are
                      shown to be half-metals, and their total spin moments follow
                      the so-called Slater-Pauling behavior of the ideal
                      half-metallic systems. We especially concentrate on the
                      properties related to the minority-spin band gap. We present
                      the possibility to engineer the properties of these alloys
                      by changing the relative concentrations of the low-valent
                      transition metal and sp atoms in a continuous way. Our
                      results show that for realistic applications, compounds rich
                      in Si and Cr are ideal since they combine large energy gaps
                      (around 0.6 eV), robust half-metallicity with respect to
                      defects (the Fermi level is located near the middle of the
                      gap), and high values of the majority-spin density of states
                      around the Fermi level, which are needed for large values of
                      the perfectly spin-polarized current in spintronic devices
                      like spin valves or magnetic tunnel junctions. (c) 2008
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IAS-1 / IFF-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)VDB781},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000252821100015},
      doi          = {10.1063/1.2831224},
      url          = {https://juser.fz-juelich.de/record/756},
}