%0 Journal Article
%A Roth, F.
%A Schmerbauch, C.
%A Ionescu, E.
%A Nicoloso, N.
%A Guillon, Olivier
%A Riedel, R.
%T High-temperature piezoresistive C / SiOC sensors
%J Journal of sensors and sensor systems
%V 4
%N 1
%@ 2194-878X
%C Göttingen
%I Copernicus Publ.
%M FZJ-2016-02102
%P 133 - 136
%D 2015
%X Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000364051800017
%R 10.5194/jsss-4-133-2015
%U https://juser.fz-juelich.de/record/807071