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000807071 1001_ $$0P:(DE-HGF)0$$aRoth, F.$$b0$$eCorresponding author
000807071 245__ $$aHigh-temperature piezoresistive C / SiOC sensors
000807071 260__ $$aGöttingen$$bCopernicus Publ.$$c2015
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000807071 520__ $$aHere we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
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000807071 7001_ $$0P:(DE-HGF)0$$aSchmerbauch, C.$$b1
000807071 7001_ $$0P:(DE-HGF)0$$aIonescu, E.$$b2
000807071 7001_ $$0P:(DE-HGF)0$$aNicoloso, N.$$b3
000807071 7001_ $$0P:(DE-Juel1)161591$$aGuillon, Olivier$$b4
000807071 7001_ $$0P:(DE-HGF)0$$aRiedel, R.$$b5
000807071 773__ $$0PERI:(DE-600)2733700-5$$a10.5194/jsss-4-133-2015$$gVol. 4, no. 1, p. 133 - 136$$n1$$p133 - 136$$tJournal of sensors and sensor systems$$v4$$x2194-878X$$y2015
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