TY  - JOUR
AU  - Roth, F.
AU  - Schmerbauch, C.
AU  - Ionescu, E.
AU  - Nicoloso, N.
AU  - Guillon, Olivier
AU  - Riedel, R.
TI  - High-temperature piezoresistive C / SiOC sensors
JO  - Journal of sensors and sensor systems
VL  - 4
IS  - 1
SN  - 2194-878X
CY  - Göttingen
PB  - Copernicus Publ.
M1  - FZJ-2016-02102
SP  - 133 - 136
PY  - 2015
AB  - Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000364051800017
DO  - DOI:10.5194/jsss-4-133-2015
UR  - https://juser.fz-juelich.de/record/807071
ER  -