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|a 2194-8771
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|a 2194-878X
024 7 _ |2 Handle
|a 2128/10026
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037 _ _ |a FZJ-2016-02102
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100 1 _ |0 P:(DE-HGF)0
|a Roth, F.
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|e Corresponding author
245 _ _ |a High-temperature piezoresistive C / SiOC sensors
260 _ _ |a Göttingen
|b Copernicus Publ.
|c 2015
336 7 _ |a Journal Article
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520 _ _ |a Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
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|a Schmerbauch, C.
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|a Ionescu, E.
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|a Nicoloso, N.
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|a Guillon, Olivier
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|a Riedel, R.
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|t Journal of sensors and sensor systems
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