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@ARTICLE{Sforzini:807654,
author = {Sforzini, J. and Telychko, M. and Krejčí, O. and
Vondráček, M. and Švec, M. and Bocquet, F. C. and Tautz,
Frank Stefan},
title = {{T}ransformation of metallic boron into substitutional
dopants in graphene on 6 {H} − {S}i{C} ( 0001 )},
journal = {Physical review / B},
volume = {93},
number = {4},
issn = {2469-9950},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2016-02140},
pages = {041302},
year = {2016},
abstract = {We investigate the development of the local bonding and
chemical state of boron atoms during the growth of B-doped
graphene on 6H−SiC(0001). Photoemission experiments reveal
the presence of two chemical states, namely, boron in the
uppermost SiC bilayers and boron substituted in both the
graphene and buffer layer lattices. We demonstrate the
participation of the dopant in the π electron system of
graphene by the presence of the π∗ resonance in the near
edge x-ray adsorption fine structure (NEXAFS) recorded at
the B K-edge. The experimental findings are supported by
NEXAFS simulations.},
cin = {PGI-3 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-3-20110106 / $I:(DE-82)080009_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142)},
pid = {G:(DE-HGF)POF3-142},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000368486600002},
doi = {10.1103/PhysRevB.93.041302},
url = {https://juser.fz-juelich.de/record/807654},
}