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024 7 _ |2 doi
|a 10.1103/PhysRevB.93.041302
024 7 _ |2 ISSN
|a 0163-1829
024 7 _ |2 ISSN
|a 0556-2805
024 7 _ |2 ISSN
|a 1095-3795
024 7 _ |2 ISSN
|a 1098-0121
024 7 _ |2 ISSN
|a 1550-235X
024 7 _ |2 ISSN
|a 2469-9969
024 7 _ |2 Handle
|a 2128/10075
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037 _ _ |a FZJ-2016-02140
082 _ _ |a 530
100 1 _ |0 P:(DE-Juel1)157982
|a Sforzini, J.
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245 _ _ |a Transformation of metallic boron into substitutional dopants in graphene on 6 H − SiC ( 0001 )
260 _ _ |a College Park, Md.
|b APS
|c 2016
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520 _ _ |a We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H−SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely, boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the π electron system of graphene by the presence of the π∗ resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the B K-edge. The experimental findings are supported by NEXAFS simulations.
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|a Telychko, M.
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|a Krejčí, O.
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|a Vondráček, M.
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|a Švec, M.
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700 1 _ |0 P:(DE-HGF)0
|a Bocquet, F. C.
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700 1 _ |0 P:(DE-Juel1)128791
|a Tautz, Frank Stefan
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773 1 8 |a 10.1103/physrevb.93.041302
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|y 2016
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773 _ _ |a 10.1103/PhysRevB.93.041302
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