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000808667 1001_ $$0P:(DE-HGF)0$$aYuan, Y.$$b0$$eCorresponding author
000808667 245__ $$aSurface damage and Structure Evolution of Recrystallized Tungsten Exposed to ELM Like Transient Loads
000808667 260__ $$aVienna$$bIAEA$$c2016
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000808667 520__ $$aSurface damage and structure evolution of the full tungsten ITER divertor under transient heat loads is a key concern for component lifetime and plasma operations. Recrystallization caused by transients and steady-state heat loads can lead to degradation of the material properties and is therefore one of the most serious issues for tungsten armor. In order to investigate the thermal response of the recrystallized tungsten under edge localized mode-like transient thermal loads, fully recrystallized tungsten samples with different average grain sizes are exposed to cyclic thermal shocks in the electron beam facility JUDITH 1. The results indicate that not only does the microstructure change due to recrystallization, but that the surface residual stress induced by mechanical polishing strongly influences the surface cracking behavior. The stress-free surface prepared by electro-polishing is shown to be more resistant to cracking than the mechanically polished one. The resulting surface roughness depends largely on the loading conditions instead of the recrystallized-grain size. As the base temperature increases from room temperature to 400 °C, surface roughening mainly due to the shear bands in each grain becomes more pronounced, and sub-grains (up to 3 μm) are simultaneously formed in the sub-surface. The directions of the shear bands exhibit strong grain-orientation dependence, and they are generally aligned with the traces of {1 1 2} twin habit planes. The results suggest that twinning deformation and dynamic recrystallization represent the predominant mechanism for surface roughening and related microstructure evolution.
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000808667 7001_ $$0P:(DE-Juel1)144673$$aDu, Juan$$b1
000808667 7001_ $$0P:(DE-Juel1)129811$$aWirtz, Marius$$b2
000808667 7001_ $$0P:(DE-HGF)0$$aLuo, G.$$b3
000808667 7001_ $$0P:(DE-HGF)0$$aLu, G.-H.$$b4
000808667 7001_ $$0P:(DE-HGF)0$$aLiu, W.$$b5
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