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@ARTICLE{Hardtdegen:808698,
      author       = {Hardtdegen, Hilde and Rieß, S. and Schuck, M. and Keller,
                      K. and Jost, P. and Du, H. and Bornhöfft, M. and Schwedt,
                      A. and Mussler, G. and von der Ahe, Martina and Mayer, J.
                      and Roth, G. and Grützmacher, D. and Mikulics, M.},
      title        = {{A} model structure for interfacial phase change memories:
                      {E}pitaxial trigonal {G}e$_{1}${S}b$_{2}${T}e$_{4}$},
      journal      = {Journal of alloys and compounds},
      volume       = {679},
      issn         = {0925-8388},
      address      = {Lausanne},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-02325},
      pages        = {285-292},
      year         = {2016},
      abstract     = {The structural characteristics of epitaxial Ge1Sb2Te4
                      deposited by MOVPE are reported. X-ray diffraction, electron
                      backscatter diffraction as well as high resolution
                      transmission electron microscopy were carried out. The
                      Ge1Sb2Te4 layers crystallize in the trigonal space group
                      View the MathML sourceR3¯m with lattice constants View the
                      MathML sourcea=4.27Å and View the MathML sourcec=41.0Å (in
                      hexagonal description). Seven alternating anion and cation
                      layers forming blocks separated by (van der Waals) gaps
                      oriented parallel to the Si (111)(111) substrate can be used
                      to describe the structure. Except for the formation of
                      crystallographic twins (rotation by 60°60° around the
                      [0001][0001] direction), no other defects are found. The
                      results indicate the existence of mixed cation layers and a
                      stacking sequence
                      (Ge0.5Sb0.5)-Te-(Ge0.25Sb0.75)-Te-Te-(Ge0.25Sb0.75)-Te. The
                      structural relation to interfacial phase change memories
                      based on superlattices is discussed.},
      cin          = {PGI-9 / JARA-FIT / RWTH / PGI-5},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-588b)36225-6 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000376104900040},
      doi          = {10.1016/j.jallcom.2016.04.013},
      url          = {https://juser.fz-juelich.de/record/808698},
}