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| 005 | 20240610121056.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1016/j.jallcom.2016.04.013 |
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| 100 | 1 | _ | |0 P:(DE-Juel1)125593 |a Hardtdegen, Hilde |b 0 |e Corresponding author |
| 245 | _ | _ | |a A model structure for interfacial phase change memories: Epitaxial trigonal Ge$_{1}$Sb$_{2}$Te$_{4}$ |
| 260 | _ | _ | |a Lausanne |b Elsevier |c 2016 |
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| 520 | _ | _ | |a The structural characteristics of epitaxial Ge1Sb2Te4 deposited by MOVPE are reported. X-ray diffraction, electron backscatter diffraction as well as high resolution transmission electron microscopy were carried out. The Ge1Sb2Te4 layers crystallize in the trigonal space group View the MathML sourceR3¯m with lattice constants View the MathML sourcea=4.27Å and View the MathML sourcec=41.0Å (in hexagonal description). Seven alternating anion and cation layers forming blocks separated by (van der Waals) gaps oriented parallel to the Si (111)(111) substrate can be used to describe the structure. Except for the formation of crystallographic twins (rotation by 60°60° around the [0001][0001] direction), no other defects are found. The results indicate the existence of mixed cation layers and a stacking sequence (Ge0.5Sb0.5)-Te-(Ge0.25Sb0.75)-Te-Te-(Ge0.25Sb0.75)-Te. The structural relation to interfacial phase change memories based on superlattices is discussed. |
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| 773 | _ | _ | |0 PERI:(DE-600)2012675-X |a 10.1016/j.jallcom.2016.04.013 |g p. S0925838816309598 |p 285-292 |t Journal of alloys and compounds |v 679 |x 0925-8388 |y 2016 |
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