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000808703 037__ $$aFZJ-2016-02330
000808703 1001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b0$$eCorresponding author$$ufzj
000808703 1112_ $$a30th Umbrella Symposium$$cJuelich$$d2016-04-11 - 2016-04-13$$wGermany
000808703 245__ $$aEmerging technologies for future low energy consumption nano-opto-electronics
000808703 260__ $$c2016
000808703 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1461239836_23612$$xInvited
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000808703 520__ $$aDuring the last decades rapid progress in the development of nanometer sized and mesoscopic devices and their fabrication brought about new insights into applied physics resulting in a number of new applications for physics, electronics, medicine, optics or even main stream electronics. Low dimensional nanometer sized objects exhibit unique material properties, which allow the fabrication of novel devices, such as highly sensitive sensors, ultra-fast transistors or optoelectronic devices. Conventionally used approaches for nano-device fabrication have already reached their limits and further improvements regarding low energy consumption could be achieved only by alternative device concepts and novel system architectures. The next generation of such devices, primarily needed for highly secure and high information rate communication systems as well as spectroscopic applications should also take the potential for mass-production and environmental compatibility into account. Our current achievements are focused on so-called “Emerging Technologies” which do not represent a steady development of the existing techniques but rather constitute a huge advancement step forward. The three novel approaches we will introduce in this contribution are based on group III nitride light emitting diode structures as the primary excitation sources. In the first approach, mesoscopic InGaN structures are used to tune the emission in the telecom band [1]. In the second, a hybrid approach will be introduced in which electrically driven nano-LEDs are utilized as the primary excitation sources to directly optically pump emission from the nanoparticles as the secondary sources – a concept suitable for mass production of few photon sources [2,3]. At last a new concept for a future mask-less lithography based on nano-LED arrays is presented [4,5]. [1] 	M. Mikulics, A. Winden, M. Marso, A. Moonshiram, H. Lüth, D. Grützmacher, and H. Hardtdegen, to be submitted (2016).[2]	M. Mikulics, Y. C. Arango, A. Winden, R. Adam, A. Hardtdegen, D. Grützmacher, E. Plinski, D. Gregušová, J. Novák, P. Kordoš, A. Moonshiram, M. Marso, Z. Sofer, H. Lüth, and H. Hardtdegen, ‘Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes’, Appl. Phys. Lett., vol. 108, no. 6, p. 061107, Feb. 2016, DOI: 10.1063/1.4941923.[3]	M. Mikulics and H. Hardtdegen, ‘Single Photon Source Suitable for Mass Production and Production Method’, patent specification WO2014094705 A1, 2013.[4]	M. Mikulics and H. Hardtdegen, ‘Nano-LED array fabrication suitable for future single photon lithography’, Nanotechnology, vol. 26, no. 18, p. 185302, 2015, DOI: 10.1088/0957-4484/26/18/185302.[5]	M. Mikulics and H. Hardtdegen, ‘Method for Optical Transmission of a Structure into a Recording Medium’, patent specification DE20121016178 20120816, 2012.
000808703 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000808703 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$ufzj
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000808703 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000808703 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000808703 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000808703 9141_ $$y2016
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000808703 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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