% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Hardtdegen:808703,
      author       = {Hardtdegen, Hilde and Mikulics, Martin},
      title        = {{E}merging technologies for future low energy consumption
                      nano-opto-electronics},
      reportid     = {FZJ-2016-02330},
      year         = {2016},
      abstract     = {During the last decades rapid progress in the development
                      of nanometer sized and mesoscopic devices and their
                      fabrication brought about new insights into applied physics
                      resulting in a number of new applications for physics,
                      electronics, medicine, optics or even main stream
                      electronics. Low dimensional nanometer sized objects exhibit
                      unique material properties, which allow the fabrication of
                      novel devices, such as highly sensitive sensors, ultra-fast
                      transistors or optoelectronic devices. Conventionally used
                      approaches for nano-device fabrication have already reached
                      their limits and further improvements regarding low energy
                      consumption could be achieved only by alternative device
                      concepts and novel system architectures. The next generation
                      of such devices, primarily needed for highly secure and high
                      information rate communication systems as well as
                      spectroscopic applications should also take the potential
                      for mass-production and environmental compatibility into
                      account. Our current achievements are focused on so-called
                      “Emerging Technologies” which do not represent a steady
                      development of the existing techniques but rather constitute
                      a huge advancement step forward. The three novel approaches
                      we will introduce in this contribution are based on group
                      III nitride light emitting diode structures as the primary
                      excitation sources. In the first approach, mesoscopic InGaN
                      structures are used to tune the emission in the telecom band
                      [1]. In the second, a hybrid approach will be introduced in
                      which electrically driven nano-LEDs are utilized as the
                      primary excitation sources to directly optically pump
                      emission from the nanoparticles as the secondary sources –
                      a concept suitable for mass production of few photon sources
                      [2,3]. At last a new concept for a future mask-less
                      lithography based on nano-LED arrays is presented [4,5]. [1]
                      M. Mikulics, A. Winden, M. Marso, A. Moonshiram, H. Lüth,
                      D. Grützmacher, and H. Hardtdegen, to be submitted
                      (2016).[2] M. Mikulics, Y. C. Arango, A. Winden, R. Adam, A.
                      Hardtdegen, D. Grützmacher, E. Plinski, D. Gregušová, J.
                      Novák, P. Kordoš, A. Moonshiram, M. Marso, Z. Sofer, H.
                      Lüth, and H. Hardtdegen, ‘Direct electro-optical pumping
                      for hybrid CdSe nanocrystal/III-nitride based
                      nano-light-emitting diodes’, Appl. Phys. Lett., vol. 108,
                      no. 6, p. 061107, Feb. 2016, DOI: 10.1063/1.4941923.[3] M.
                      Mikulics and H. Hardtdegen, ‘Single Photon Source Suitable
                      for Mass Production and Production Method’, patent
                      specification WO2014094705 A1, 2013.[4] M. Mikulics and H.
                      Hardtdegen, ‘Nano-LED array fabrication suitable for
                      future single photon lithography’, Nanotechnology, vol.
                      26, no. 18, p. 185302, 2015, DOI:
                      10.1088/0957-4484/26/18/185302.[5] M. Mikulics and H.
                      Hardtdegen, ‘Method for Optical Transmission of a
                      Structure into a Recording Medium’, patent specification
                      DE20121016178 20120816, 2012.},
      month         = {Apr},
      date          = {2016-04-11},
      organization  = {30th Umbrella Symposium, Juelich
                       (Germany), 11 Apr 2016 - 13 Apr 2016},
      subtyp        = {Invited},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/808703},
}