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@ARTICLE{Baeumer:808720,
      author       = {Baeumer, C. and Raab, N. and Menke, T. and Schmitz, C. and
                      Rosezin, R. and Müller, P. and Andrä, M. and Feyer, V. and
                      Bruchhaus, R. and Gunkel, F. and Schneider, C. M. and Waser,
                      R. and Dittmann, R.},
      title        = {{V}erification of redox-processes as switching and
                      retention failure mechanisms in {N}b:{S}r{T}i{O} 3 /metal
                      devices},
      journal      = {Nanoscale},
      volume       = {8},
      number       = {29},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2016-02347},
      pages        = {13967-13975},
      year         = {2016},
      abstract     = {Nanoscale redox reactions in transition metal oxides are
                      believed to be the physical foundation of memristive
                      devices, which present a highly scalable, low-power
                      alternative for future non-volatile memory devices. The
                      interface between noble metal top electrodes and Nb-doped
                      SrTiO3 single crystals may serve as a prominent but not yet
                      well-understood example of such memristive devices. In this
                      report, we will present experimental evidence that nanoscale
                      redox reactions and the associated valence change mechanism
                      are indeed responsible for the resistance change in noble
                      metal/Nb-doped SrTiO3 junctions with dimensions ranging from
                      the micrometer scale down to the nanometer regime. Direct
                      verification of the valence change mechanism is given by
                      spectromicroscopic characterization of switching filaments.
                      Furthermore, it is found that the resistance change over
                      time is driven by the reoxidation of a previously
                      oxygen-deficient region. The retention times of the low
                      resistance states, accordingly, can be dramatically improved
                      under vacuum conditions as well as through the insertion of
                      a thin Al2O3 layer which prevents this reoxidation. These
                      insights finally confirm the resistive switching mechanism
                      at these interfaces and are therefore of significant
                      importance for the study and application of memristive
                      devices based on Nb-doped SrTiO3 as well as systems with
                      similar switching mechanisms.},
      cin          = {PGI-6 / PGI-7 / Neutronenstreuung ; JCNS-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-7-20110106 /
                      I:(DE-Juel1)JCNS-1-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000381815000016},
      doi          = {10.1039/C6NR00824K},
      url          = {https://juser.fz-juelich.de/record/808720},
}