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| Hauptseite > Publikationsdatenbank > Ultrafast switching in Ta2O5-based resistive memories > print |
| 001 | 808807 | ||
| 005 | 20210129222907.0 | ||
| 037 | _ | _ | |a FZJ-2016-02422 |
| 100 | 1 | _ | |a Havel, V. |0 P:(DE-HGF)0 |b 0 |
| 111 | 2 | _ | |a Silicon Nanoelectronics Workshop |c Honolulu |d 2016-06-12 - 2016-06-13 |w USA |
| 245 | _ | _ | |a Ultrafast switching in Ta2O5-based resistive memories |
| 260 | _ | _ | |c 2016 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 700 | 1 | _ | |a Fleck, K. |0 P:(DE-HGF)0 |b 1 |
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