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@ARTICLE{Pomaska:808999,
      author       = {Pomaska, Manuel and Köhler, Florian and Zastrow, Uwe and
                      Mock, Jan and Pennartz, Frank and Muthmann, Stefan and
                      Astakhov, Oleksandr and Carius, Reinhard and Finger,
                      Friedhelm and Ding, Kaining},
      title        = {{N}ew insight into the microstructure and doping of
                      unintentionally n-type microcrystalline silicon carbide},
      journal      = {Journal of applied physics},
      volume       = {119},
      number       = {17},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-02486},
      pages        = {175303},
      year         = {2016},
      abstract     = {Microcrystalline silicon carbide (μc-SiC:H) deposited by
                      hot wire chemical vapor deposition (HWCVD) and
                      plasma-enhanced chemical vapor deposition (PECVD) provide
                      advantageous opto-electronic properties, making it
                      attractive as a window layer material in silicon thin-film
                      and silicon heterojunction solar cells. However, it is still
                      not clear which electrical transport mechanisms yield dark
                      conductivities up to 10−3 S/cm without the active use of
                      any doping gas and how the transport mechanisms are related
                      to the morphology of μc-SiC:H. To investigate these open
                      questions systematically, we investigated HWCVD and PECVD
                      grown layers that provide a very extensive range of dark
                      conductivity values from 10−12 S/cm to 10−3 S/cm. We
                      found out by secondary ion mass spectrometry measurements
                      that no direct correlation exists between oxygen or nitrogen
                      concentrations and high dark conductivity σd, high charge
                      carrier density n, and low activation energy Ea. Higher σd
                      seems to rise from lower hydrogen concentrations or/and
                      larger coherent domain sizes LSiC. On the one hand, the
                      decrease of σd with increasing hydrogen concentration might
                      be due to the inactivation of donors by hydrogen passivation
                      that gives rise to decreased n. On the other hand,
                      qualitatively consistent with the Seto model, the lower σd
                      and lower n might be caused by smaller LSiC, since the
                      fraction of depleted grain boundaries with higher Ea
                      increases accordingly.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000377716500035},
      doi          = {10.1063/1.4948479},
      url          = {https://juser.fz-juelich.de/record/808999},
}