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@ARTICLE{Tsai:809435,
      author       = {Tsai, Chih-Long and Roddatis, Vladimir and Chandran, C.
                      Vinod and Ma, Qianli and Uhlenbruck, Sven and Bram, Martin
                      and Heitjans, Paul and Guillon, Olivier},
      title        = {{L}i$_{7}$ {L}a$_{3}$ {Z}r$_{2}$ {O}$_{12}$ {I}nterface
                      {M}odification for {L}i {D}endrite {P}revention},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {8},
      number       = {16},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2016-02541},
      pages        = {10617 - 10626},
      year         = {2016},
      abstract     = {Al-contaminated Ta-substituted Li7La3Zr2O12 (LLZ:Ta),
                      synthesized via solid-state reaction, and Al-free
                      Ta-substituted Li7La3Zr2O12, fabricated by hot-press
                      sintering (HP-LLZ:Ta), have relative densities of $92.7\%$
                      and $99.0\%,$ respectively. Impedance spectra show the total
                      conductivity of LLZ:Ta to be 0.71 mS cm–1 at 30 °C and
                      that of HP-LLZ:Ta to be 1.18 mS cm–1. The lower total
                      conductivity for LLZ:Ta than HP-LLZ:Ta was attributed to the
                      higher grain boundary resistance and lower relative density
                      of LLZ:Ta, as confirmed by their microstructures. Constant
                      direct current measurements of HP-LLZ:Ta with a current
                      density of 0.5 mA cm–2 suggest that the short circuit
                      formation was neither due to the low relative density of the
                      samples nor the reduction of Li–Al glassy phase at grain
                      boundaries. TEM, EELS, and MAS NMR were used to prove that
                      the short circuit was from Li dendrite formation inside
                      HP-LLZ:Ta, which took place along the grain boundaries. The
                      Li dendrite formation was found to be mostly due to the
                      inhomogeneous contact between LLZ solid electrolyte and Li
                      electrodes. By flatting the surface of the LLZ:Ta pellets
                      and using thin layers of Au buffer to improve the contact
                      between LLZ:Ta and Li electrodes, the interface resistance
                      could be dramatically reduced, which results in
                      short-circuit-free cells when running a current density of
                      0.5 mA cm–2 through the pellets. Temperature-dependent
                      stepped current density galvanostatic cyclings were also
                      carried out to determine the critical current densities for
                      the short circuit formation. The short circuit that still
                      occurred at higher current density is due to the
                      inhomogeneous dissolution and deposition of metallic Li at
                      the interfaces of Li electrodes and LLZ solid electrolyte
                      when cycling the cell at large current densities.},
      cin          = {IEK-1 / JARA-ENERGY},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-1-20101013 / $I:(DE-82)080011_20140620$},
      pnm          = {131 - Electrochemical Storage (POF3-131)},
      pid          = {G:(DE-HGF)POF3-131},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000375245100063},
      doi          = {10.1021/acsami.6b00831},
      url          = {https://juser.fz-juelich.de/record/809435},
}