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@ARTICLE{Tas:809775,
author = {Tas, Murat and Sasioglu, Ersoy and Galanakis, I. and
Friedrich, Christoph and Blügel, Stefan},
title = {{Q}uasiparticle band structure of the almost-gapless
transition-metal-based {H}eusler semiconductors143},
journal = {Physical review / B},
volume = {93},
number = {19},
issn = {2469-9950},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2016-02702},
pages = {195155},
year = {2016},
abstract = {Transition-metal-based Heusler semiconductors are promising
materials for a variety of applications ranging from
spintronics to thermoelectricity. Employing the GW
approximation within the framework of the FLAPW method, we
study the quasiparticle band structure of a number of such
compounds being almost gapless semiconductors. We find that
in contrast to the sp-electron based semiconductors such as
Si and GaAs, in these systems, the many-body corrections
have a minimal effect on the electronic band structure and
the energy band gap increases by less than 0.2 eV, which
makes the starting point density functional theory (DFT) a
good approximation for the description of electronic and
optical properties of these materials. Furthermore, the band
gap can be tuned either by the variation of the lattice
parameter or by the substitution of the sp-chemical
element.},
cin = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000376637500002},
doi = {10.1103/PhysRevB.93.195155},
url = {https://juser.fz-juelich.de/record/809775},
}