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@ARTICLE{Sertsu:809862,
      author       = {Sertsu, M. G. and Giglia, A. and Brose, S. and Park, D. and
                      Wang, Z. S. and Mayer, Joachim and Juschkin, Larissa and
                      Nicolosi, P.},
      title        = {{D}eposition and characterization of
                      {B}$_{4}${C}/{C}e{O}$_{2}$ multilayers at 6.x nm extreme
                      ultraviolet wavelengths},
      journal      = {Journal of applied physics},
      volume       = {119},
      number       = {9},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-02788},
      pages        = {095301 -},
      year         = {2016},
      abstract     = {New multilayers of boron carbide/cerium dioxide (B4C/CeO2)
                      combination on silicon (Si) substrate are manufactured to
                      represent reflective-optics candidates for future
                      lithography at 6.x nm wavelength. This is one of only a few
                      attempts to make multilayers of this kind. Combination of
                      several innovative experiments enables detailed study of
                      optical properties, structural properties, and interface
                      profiles of the multilayers in order to open up a room for
                      further optimization of the manufacturing process. The
                      interface profile is visualized by high-angle annular
                      dark-field imaging which provides highly sensitive contrast
                      to atomic number. Synchrotron based at-wavelength extreme
                      ultraviolet(EUV) reflectance measurements near the boron (B)
                      absorption edge allow derivation of optical parameters with
                      high sensitivity to local atom interactions. X-ray
                      reflectivity measurements at Cu-Kalpha(8 keV) determine
                      the period of multilayers with high in-depth resolution. By
                      combining these measurements and choosing robust nonlinear
                      curve fitting algorithms, accuracy of the results has been
                      significantly improved. It also enables a comprehensive
                      characterization of multilayers.Interface diffusion is
                      determined to be a major cause for the low reflectivity
                      performance. Optical constants of B4C and CeO2 layers are
                      derived in EUV wavelengths. Besides, optical properties and
                      asymmetric thicknesses of inter-diffusion layers
                      (interlayers) in EUV wavelengths near the boron edge are
                      determined. Finally, ideal reflectivity of the B4C/CeO2
                      combination is calculated by using optical constants derived
                      from the proposed measurements in order to evaluate the
                      potentiality of the design.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000372351900055},
      doi          = {10.1063/1.4942656},
      url          = {https://juser.fz-juelich.de/record/809862},
}