000809865 001__ 809865 000809865 005__ 20210129223155.0 000809865 0247_ $$2doi$$a10.1364/OL.39.006969 000809865 0247_ $$2ISSN$$a0146-9592 000809865 0247_ $$2ISSN$$a1539-4794 000809865 0247_ $$2WOS$$aWOS:000346347900052 000809865 0247_ $$2altmetric$$aaltmetric:2980912 000809865 0247_ $$2pmid$$apmid:25503043 000809865 037__ $$aFZJ-2016-02791 000809865 082__ $$a530 000809865 1001_ $$0P:(DE-HGF)0$$aKim, Hyun-su$$b0$$eCorresponding author 000809865 245__ $$aFractional Talbot lithography with extreme ultraviolet light 000809865 260__ $$aWashington, DC$$bSoc.$$c2014 000809865 3367_ $$2DRIVER$$aarticle 000809865 3367_ $$2DataCite$$aOutput Types/Journal article 000809865 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1467706595_2695 000809865 3367_ $$2BibTeX$$aARTICLE 000809865 3367_ $$2ORCID$$aJOURNAL_ARTICLE 000809865 3367_ $$00$$2EndNote$$aJournal Article 000809865 520__ $$aFractional Talbot effect leads to the possibility to implement patterning of structures with smaller periods than the master mask. This is particularly attractive when using short wavelength illumination in the extreme ultraviolet because of attainable resolution in the sub-100-nm range. In this Letter, we demonstrate the Talbot lithography with the fractional Talbot effect under coherent illumination generated with a capillary discharge Ne-like Ar extreme ultraviolet laser. Various spatial frequency multiplications up to 5 000809865 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0 000809865 588__ $$aDataset connected to CrossRef 000809865 7001_ $$0P:(DE-HGF)0$$aLi, Wei$$b1 000809865 7001_ $$0P:(DE-HGF)0$$aDanylyuk, Serhiy$$b2 000809865 7001_ $$0P:(DE-HGF)0$$aBrocklesby, William S.$$b3 000809865 7001_ $$0P:(DE-HGF)0$$aMarconi, Mario C.$$b4 000809865 7001_ $$0P:(DE-Juel1)157957$$aJuschkin, Larissa$$b5$$eCorresponding author 000809865 773__ $$0PERI:(DE-600)1479014-2$$a10.1364/OL.39.006969$$gVol. 39, no. 24, p. 6969 -$$n24$$p6969-6972$$tOptics letters$$v39$$x1539-4794$$y2014 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.pdf$$yRestricted 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.gif?subformat=icon$$xicon$$yRestricted 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.jpg?subformat=icon-1440$$xicon-1440$$yRestricted 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.jpg?subformat=icon-180$$xicon-180$$yRestricted 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.jpg?subformat=icon-640$$xicon-640$$yRestricted 000809865 8564_ $$uhttps://juser.fz-juelich.de/record/809865/files/ol-39-24-6969.pdf?subformat=pdfa$$xpdfa$$yRestricted 000809865 909CO $$ooai:juser.fz-juelich.de:809865$$pVDB 000809865 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)166021$$aForschungszentrum Jülich$$b0$$kFZJ 000809865 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b2$$kRWTH 000809865 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157957$$aForschungszentrum Jülich$$b5$$kFZJ 000809865 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-Juel1)157957$$aRWTH Aachen$$b5$$kRWTH 000809865 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0 000809865 9141_ $$y2016 000809865 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS 000809865 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline 000809865 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bOPT LETT : 2014 000809865 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List 000809865 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index 000809865 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection 000809865 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded 000809865 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences 000809865 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology 000809865 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5 000809865 920__ $$lyes 000809865 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0 000809865 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1 000809865 980__ $$ajournal 000809865 980__ $$aVDB 000809865 980__ $$aI:(DE-Juel1)PGI-9-20110106 000809865 980__ $$aI:(DE-82)080009_20140620 000809865 980__ $$aUNRESTRICTED