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@ARTICLE{Kulju:809894,
      author       = {Kulju, S. and Akola, J. and Prendergast, D. and Jones,
                      Robert O.},
      title        = {{T}uning electronic properties of graphene heterostructures
                      by amorphous-to-crystalline phase transitions},
      journal      = {Physical review / B},
      volume       = {93},
      number       = {19},
      issn         = {2469-9950},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2016-02802},
      pages        = {195443},
      year         = {2016},
      abstract     = {The remarkable ability of phase change materials (PCM) to
                      switch between amorphous and crystalline states on a
                      nanosecond time scale could provide new opportunities for
                      graphene engineering. We have used density functional
                      calculations to investigate the structures and electronic
                      properties of heterostructures of thin amorphous and
                      crystalline films of the PCM GeTe (16 Å thick) and
                      Ge2Sb2Te5 (20 Å) between graphene layers. The interaction
                      between graphene and PCM is very weak, charge transfer is
                      negligible, and the structures of the chalcogenide films
                      differ little from those of bulk phases. A crystalline GeTe
                      (111) layer induces a band gap opening of 80 meV at the
                      Dirac point. This effect is absent for the amorphous film,
                      but the Fermi energy shifts down along the Dirac cone by
                      −60 meV. Ge2Sb2Te5 shows similar features, although
                      inherent disorder in the crystalline rocksalt structure
                      reduces the contrast in band structure from that in the
                      amorphous structure. These features originate in charge
                      polarization within the crystalline films, which show
                      electromechanical response (piezoelectricity) upon
                      compression, and show that the electronic properties of
                      graphene structures can be tuned by inducing ultrafast
                      structural transitions within the chalcogenide layers.
                      Graphene can also be used to manipulate the structural state
                      of the PCM layer and its electronic and optical properties.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000376920400015},
      doi          = {10.1103/PhysRevB.93.195443},
      url          = {https://juser.fz-juelich.de/record/809894},
}