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000810229 037__ $$aFZJ-2016-03096
000810229 041__ $$aEnglish
000810229 1001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b0$$eCorresponding author
000810229 1112_ $$aCIMTEC$$cPerugia$$d2016-06-05 - 2016-06-09$$wItaly
000810229 245__ $$aEpitaxial trigonal Ge-Sb-Te alloys: model materials for future low energy consumption non-volatile memory applications?
000810229 260__ $$c2016
000810229 3367_ $$033$$2EndNote$$aConference Paper
000810229 3367_ $$2DataCite$$aOther
000810229 3367_ $$2BibTeX$$aINPROCEEDINGS
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000810229 520__ $$aThe interfacial phase change memory (iPCM) based on GeTe-Sb2Te3 superlattices has been reported to be a suitable approach to reduce energy consumption in data storage applications. A field-induced transition from the conductive to the highly resistive state is postulated to occur from one solid phase to another without melting. Recently, we presented the deposition of trigonal Ge1Sb2Te4 / Si (111) by the industrially relevant method metalorganic vapor phase epitaxy (MOVPE). The trigonal layers exhibit some structural “ingredients” of an iPCM superlattice. Here, detailed structural studies as well as first growth and characterization studies on further trigonal Ge-Sb-Te alloys will be shown. The studies indicate that alternating planes of cations and anions are present and that the Ge and Sb cations mix. The film accommodates to the substrate by forming defects within the first few nanometers of growth. All in all, the highly ordered trigonal Ge-Sb-Te alloys grown by MOVPE will contribute to the understanding, improvement and control of the iPCM switching mechanism still under debate.
000810229 536__ $$0G:(DE-HGF)POF3-523$$a523 - Controlling Configuration-Based Phenomena (POF3-523)$$cPOF3-523$$fPOF III$$x0
000810229 7001_ $$0P:(DE-HGF)0$$aRiess, Sally$$b1
000810229 7001_ $$0P:(DE-Juel1)145470$$aSchuck, Martin$$b2
000810229 7001_ $$0P:(DE-HGF)0$$aKeller, Kristof$$b3
000810229 7001_ $$0P:(DE-HGF)0$$aJost, Christian$$b4
000810229 7001_ $$0P:(DE-Juel1)159411$$aBornhöfft, Manuel$$b5
000810229 7001_ $$0P:(DE-Juel1)145710$$aDu, Hongchu$$b6
000810229 7001_ $$0Extern$$aSchwedt, Alexander$$b7
000810229 7001_ $$0P:(DE-Juel1)130824$$aMayer, Joachim$$b8
000810229 7001_ $$0P:(DE-HGF)0$$aRoth, Georg$$b9
000810229 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b10
000810229 7001_ $$0P:(DE-Juel1)128650$$avon der Ahe, Martina$$b11$$ufzj
000810229 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b12
000810229 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b13
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000810229 9131_ $$0G:(DE-HGF)POF3-523$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000810229 9141_ $$y2016
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000810229 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000810229 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x1
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