TY  - CONF
AU  - Hardtdegen, Hilde
AU  - Riess, Sally
AU  - Schuck, Martin
AU  - Keller, Kristof
AU  - Jost, Christian
AU  - Bornhöfft, Manuel
AU  - Du, Hongchu
AU  - Schwedt, Alexander
AU  - Mayer, Joachim
AU  - Roth, Georg
AU  - Mussler, Gregor
AU  - von der Ahe, Martina
AU  - Grützmacher, Detlev
AU  - Mikulics, Martin
TI  - Epitaxial trigonal Ge-Sb-Te alloys: model materials for future low energy consumption non-volatile memory applications?
M1  - FZJ-2016-03096
PY  - 2016
AB  - The interfacial phase change memory (iPCM) based on GeTe-Sb2Te3 superlattices has been reported to be a suitable approach to reduce energy consumption in data storage applications. A field-induced transition from the conductive to the highly resistive state is postulated to occur from one solid phase to another without melting. Recently, we presented the deposition of trigonal Ge1Sb2Te4 / Si (111) by the industrially relevant method metalorganic vapor phase epitaxy (MOVPE). The trigonal layers exhibit some structural “ingredients” of an iPCM superlattice. Here, detailed structural studies as well as first growth and characterization studies on further trigonal Ge-Sb-Te alloys will be shown. The studies indicate that alternating planes of cations and anions are present and that the Ge and Sb cations mix. The film accommodates to the substrate by forming defects within the first few nanometers of growth. All in all, the highly ordered trigonal Ge-Sb-Te alloys grown by MOVPE will contribute to the understanding, improvement and control of the iPCM switching mechanism still under debate.
T2  - CIMTEC
CY  - 5 Jun 2016 - 9 Jun 2016, Perugia (Italy)
Y2  - 5 Jun 2016 - 9 Jun 2016
M2  - Perugia, Italy
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/810229
ER  -