% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Hardtdegen:810229,
      author       = {Hardtdegen, Hilde and Riess, Sally and Schuck, Martin and
                      Keller, Kristof and Jost, Christian and Bornhöfft, Manuel
                      and Du, Hongchu and Schwedt, Alexander and Mayer, Joachim
                      and Roth, Georg and Mussler, Gregor and von der Ahe, Martina
                      and Grützmacher, Detlev and Mikulics, Martin},
      title        = {{E}pitaxial trigonal {G}e-{S}b-{T}e alloys: model materials
                      for future low energy consumption non-volatile memory
                      applications?},
      reportid     = {FZJ-2016-03096},
      year         = {2016},
      abstract     = {The interfacial phase change memory (iPCM) based on
                      GeTe-Sb2Te3 superlattices has been reported to be a suitable
                      approach to reduce energy consumption in data storage
                      applications. A field-induced transition from the conductive
                      to the highly resistive state is postulated to occur from
                      one solid phase to another without melting. Recently, we
                      presented the deposition of trigonal Ge1Sb2Te4 / Si (111) by
                      the industrially relevant method metalorganic vapor phase
                      epitaxy (MOVPE). The trigonal layers exhibit some structural
                      “ingredients” of an iPCM superlattice. Here, detailed
                      structural studies as well as first growth and
                      characterization studies on further trigonal Ge-Sb-Te alloys
                      will be shown. The studies indicate that alternating planes
                      of cations and anions are present and that the Ge and Sb
                      cations mix. The film accommodates to the substrate by
                      forming defects within the first few nanometers of growth.
                      All in all, the highly ordered trigonal Ge-Sb-Te alloys
                      grown by MOVPE will contribute to the understanding,
                      improvement and control of the iPCM switching mechanism
                      still under debate.},
      month         = {Jun},
      date          = {2016-06-05},
      organization  = {CIMTEC, Perugia (Italy), 5 Jun 2016 -
                       9 Jun 2016},
      subtyp        = {Other},
      cin          = {PGI-9 / PGI-5},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/810229},
}