000810230 001__ 810230
000810230 005__ 20210129223341.0
000810230 037__ $$aFZJ-2016-03097
000810230 041__ $$aEnglish
000810230 1001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b0$$eCorresponding author
000810230 1112_ $$aCIMTEC$$cPerugia$$d2016-06-05 - 2016-06-09$$wItaly
000810230 245__ $$aCharge transport and characterization of freestanding Ge1Sb2Te4 platelets integrated in coplanar strip lines
000810230 260__ $$c2016
000810230 3367_ $$033$$2EndNote$$aConference Paper
000810230 3367_ $$2BibTeX$$aINPROCEEDINGS
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000810230 520__ $$aCurrently, there is a growing interest in the development of data storage devices and circuits based on monocrystalline chalcogenides. They can be switched without thermally initialized structural changes. The switching consumes considerably less energy.  However, the development and optimization of such material systems calls for alternative device processing and characterization techniques. A novel nanostructure-transfer technique was developed and will be reported with which epitaxially grown Ge1Sb2Te4 platelets were transferred from their native Si (111) substrate onto a sapphire-host substrate. The freestanding Ge1Sb2Te4 platelets were fully integrated into Ti/Au coplanar strip lines and electrically characterized. The aim was to study intrinsic material attributes and charge transport properties without any effect of the native substrate nor influence and interaction of chemical products needed in conventional lithographic processes. Highly resistive switching was observed without any detectable structural deterioration. Current densities exhibit values from 10-6 down to 10-11A/µm3 at 1V bias switching. Our study on freestanding Ge1Sb2Te4 platelets contributes to a better understanding of charge transport related physical phenomena in novel chalcogenides material systems.
000810230 536__ $$0G:(DE-HGF)POF3-523$$a523 - Controlling Configuration-Based Phenomena (POF3-523)$$cPOF3-523$$fPOF III$$x0
000810230 7001_ $$0P:(DE-Juel1)145470$$aSchuck, Martin$$b1
000810230 7001_ $$0P:(DE-HGF)0$$aJost, Christian$$b2
000810230 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b3
000810230 7001_ $$0P:(DE-HGF)0$$aRiess, Sally$$b4
000810230 7001_ $$0P:(DE-Juel1)151156$$aArango, Yulieth$$b5
000810230 7001_ $$0P:(DE-Juel1)128608$$aLüth, Hans$$b6
000810230 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b7
000810230 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b8
000810230 909CO $$ooai:juser.fz-juelich.de:810230$$pVDB
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000810230 9131_ $$0G:(DE-HGF)POF3-523$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000810230 9141_ $$y2016
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000810230 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000810230 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
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