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@INPROCEEDINGS{Mikulics:810230,
      author       = {Mikulics, Martin and Schuck, Martin and Jost, Christian and
                      Adam, Roman and Riess, Sally and Arango, Yulieth and Lüth,
                      Hans and Grützmacher, Detlev and Hardtdegen, Hilde},
      title        = {{C}harge transport and characterization of freestanding
                      {G}e1{S}b2{T}e4 platelets integrated in coplanar strip
                      lines},
      reportid     = {FZJ-2016-03097},
      year         = {2016},
      abstract     = {Currently, there is a growing interest in the development
                      of data storage devices and circuits based on
                      monocrystalline chalcogenides. They can be switched without
                      thermally initialized structural changes. The switching
                      consumes considerably less energy. However, the development
                      and optimization of such material systems calls for
                      alternative device processing and characterization
                      techniques. A novel nanostructure-transfer technique was
                      developed and will be reported with which epitaxially grown
                      Ge1Sb2Te4 platelets were transferred from their native Si
                      (111) substrate onto a sapphire-host substrate. The
                      freestanding Ge1Sb2Te4 platelets were fully integrated into
                      Ti/Au coplanar strip lines and electrically characterized.
                      The aim was to study intrinsic material attributes and
                      charge transport properties without any effect of the native
                      substrate nor influence and interaction of chemical products
                      needed in conventional lithographic processes. Highly
                      resistive switching was observed without any detectable
                      structural deterioration. Current densities exhibit values
                      from 10-6 down to 10-11A/µm3 at 1V bias switching. Our
                      study on freestanding Ge1Sb2Te4 platelets contributes to a
                      better understanding of charge transport related physical
                      phenomena in novel chalcogenides material systems.},
      month         = {Jun},
      date          = {2016-06-05},
      organization  = {CIMTEC, Perugia (Italy), 5 Jun 2016 -
                       9 Jun 2016},
      subtyp        = {Other},
      cin          = {PGI-9 / PGI-6},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/810230},
}