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| Hauptseite > Publikationsdatenbank > Charge transport and characterization of freestanding Ge1Sb2Te4 platelets integrated in coplanar strip lines > print |
| Hauptseite > Publikationsdatenbank > Charge transport and characterization of freestanding Ge1Sb2Te4 platelets integrated in coplanar strip lines > print |
| 001 | 810230 | ||
| 005 | 20210129223341.0 | ||
| 037 | _ | _ | |a FZJ-2016-03097 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a CIMTEC |c Perugia |d 2016-06-05 - 2016-06-09 |w Italy |
| 245 | _ | _ | |a Charge transport and characterization of freestanding Ge1Sb2Te4 platelets integrated in coplanar strip lines |
| 260 | _ | _ | |c 2016 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 520 | _ | _ | |a Currently, there is a growing interest in the development of data storage devices and circuits based on monocrystalline chalcogenides. They can be switched without thermally initialized structural changes. The switching consumes considerably less energy. However, the development and optimization of such material systems calls for alternative device processing and characterization techniques. A novel nanostructure-transfer technique was developed and will be reported with which epitaxially grown Ge1Sb2Te4 platelets were transferred from their native Si (111) substrate onto a sapphire-host substrate. The freestanding Ge1Sb2Te4 platelets were fully integrated into Ti/Au coplanar strip lines and electrically characterized. The aim was to study intrinsic material attributes and charge transport properties without any effect of the native substrate nor influence and interaction of chemical products needed in conventional lithographic processes. Highly resistive switching was observed without any detectable structural deterioration. Current densities exhibit values from 10-6 down to 10-11A/µm3 at 1V bias switching. Our study on freestanding Ge1Sb2Te4 platelets contributes to a better understanding of charge transport related physical phenomena in novel chalcogenides material systems. |
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