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@ARTICLE{Wirths:810265,
      author       = {Wirths, S. and Buca, D. and Mantl, S.},
      title        = {{S}i–{G}e–{S}n alloys: {F}rom growth to applications},
      journal      = {Progress in crystal growth and characterization of
                      materials},
      volume       = {62},
      number       = {1},
      issn         = {0960-8974},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-03125},
      pages        = {1 - 39},
      year         = {2016},
      abstract     = {In this review article, we address key material parameters
                      as well as the fabrication and application of crystalline
                      GeSn binary and SiGeSn ternary alloys. Here, the transition
                      from an indirect to a fundamental direct bandgap material
                      will be discussed. The main emphasis, however, is put on the
                      Si–Ge–Sn epitaxy. The low solid solubility of α-Sn in
                      Ge and Si of below 1 $at.\%$ along with the large lattice
                      mismatch between α-Sn (6.489 Å) and Ge (5.646 Å) or
                      Si (5.431 Å) of about $15\%$ and $20\%,$ respectively,
                      requires non-equilibrium growth processes. The most commonly
                      used approaches, i.e. molecular beam epitaxy (MBE) and
                      chemical vapor deposition (CVD), will be reviewed in terms
                      of crucial process parameters, structural as well as optical
                      quality and employed precursor combinations including
                      Germanium hydrides, Silicon hydrides and a variety of Sn
                      compounds like SnD4, SnCl4 or C6H5SnD3. Special attention is
                      devoted to the growth temperature window and growth rates
                      being the most important growth parameters concerning the
                      substitutional incorporation of Sn atoms into the Ge diamond
                      lattice. Furthermore, the mainly CVD-driven epitaxy of high
                      quality SiGeSn ternary alloys, allowing the decoupling of
                      band engineering and lattice constant, is presented. Since
                      achieving fundamental direct bandgap Sn-based materials
                      strongly depends on the applied strain within the epilayers,
                      ways to control and modify the strain are shown, especially
                      the plastic strain relaxation of (Si)GeSn layers grown on
                      Ge.Based on recently achieved improvements of the
                      crystalline quality, novel low power and high mobility GeSn
                      electronic and photonic devices have been developed and are
                      reviewed in this paper. The use of GeSn as optically active
                      gain or channel material with its lower and potentially
                      direct bandgap compared to fundamentally indirect Ge
                      (0.66 eV) and Si (1.12 eV) provides a viable solution to
                      overcome the obstacles in both fields photonics and
                      electronics. Moreover, the epitaxial growth of Sn-based
                      semiconductors using CMOS compatible substrates on the road
                      toward a monolithically integrated and efficient group IV
                      light emitter is presented.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000372761800001},
      doi          = {10.1016/j.pcrysgrow.2015.11.001},
      url          = {https://juser.fz-juelich.de/record/810265},
}