000810281 001__ 810281
000810281 005__ 20240610121133.0
000810281 0247_ $$2doi$$a10.1063/1.4945658
000810281 0247_ $$2Handle$$a2128/11473
000810281 0247_ $$2WOS$$aWOS:000375846100006
000810281 037__ $$aFZJ-2016-03136
000810281 082__ $$a620
000810281 1001_ $$00000-0003-3196-7313$$aVrejoiu, I.$$b0$$eCorresponding author
000810281 245__ $$aProbing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering
000810281 260__ $$aMelville, NY$$bAIP Publ.$$c2016
000810281 3367_ $$2DRIVER$$aarticle
000810281 3367_ $$2DataCite$$aOutput Types/Journal article
000810281 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1466143580_27110
000810281 3367_ $$2BibTeX$$aARTICLE
000810281 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000810281 3367_ $$00$$2EndNote$$aJournal Article
000810281 520__ $$aSingle crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3films has, however, been little investigated. By temperature-dependent Raman scatteringspectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.
000810281 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000810281 588__ $$aDataset connected to CrossRef
000810281 7001_ $$0P:(DE-HGF)0$$aHimcinschi, C.$$b1
000810281 7001_ $$0P:(DE-Juel1)157631$$aJin, L.$$b2
000810281 7001_ $$0P:(DE-Juel1)130736$$aJia, C.-L.$$b3
000810281 7001_ $$0P:(DE-Juel1)157925$$aRaab, N.$$b4
000810281 7001_ $$00000-0002-3454-1601$$aEngelmayer, J.$$b5
000810281 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6
000810281 7001_ $$0P:(DE-Juel1)130620$$aDittmann, R.$$b7
000810281 7001_ $$0P:(DE-HGF)0$$avan Loosdrecht, P. H. M.$$b8
000810281 773__ $$0PERI:(DE-600)2722985-3$$a10.1063/1.4945658$$gVol. 4, no. 4, p. 046103 -$$n4$$p046103 -$$tAPL materials$$v4$$x2166-532X$$y2016
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.pdf$$yOpenAccess
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.gif?subformat=icon$$xicon$$yOpenAccess
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000810281 8564_ $$uhttps://juser.fz-juelich.de/record/810281/files/1.4945658.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000810281 909CO $$ooai:juser.fz-juelich.de:810281$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000810281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157631$$aForschungszentrum Jülich$$b2$$kFZJ
000810281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130736$$aForschungszentrum Jülich$$b3$$kFZJ
000810281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157925$$aForschungszentrum Jülich$$b4$$kFZJ
000810281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b6$$kFZJ
000810281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich$$b7$$kFZJ
000810281 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000810281 9141_ $$y2016
000810281 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000810281 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000810281 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000810281 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000810281 915__ $$0StatID:(DE-HGF)0500$$2StatID$$aDBCoverage$$bDOAJ
000810281 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000810281 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000810281 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000810281 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000810281 920__ $$lyes
000810281 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000810281 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x1
000810281 9801_ $$aFullTexts
000810281 980__ $$ajournal
000810281 980__ $$aVDB
000810281 980__ $$aUNRESTRICTED
000810281 980__ $$aI:(DE-Juel1)PGI-5-20110106
000810281 980__ $$aI:(DE-Juel1)PGI-7-20110106
000810281 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000810281 981__ $$aI:(DE-Juel1)PGI-7-20110106