TY  - JOUR
AU  - Vrejoiu, I.
AU  - Himcinschi, C.
AU  - Jin, L.
AU  - Jia, C.-L.
AU  - Raab, N.
AU  - Engelmayer, J.
AU  - Waser, R.
AU  - Dittmann, R.
AU  - van Loosdrecht, P. H. M.
TI  - Probing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering
JO  - APL materials
VL  - 4
IS  - 4
SN  - 2166-532X
CY  - Melville, NY
PB  - AIP Publ.
M1  - FZJ-2016-03136
SP  - 046103 -
PY  - 2016
AB  - Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3films has, however, been little investigated. By temperature-dependent Raman scatteringspectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000375846100006
DO  - DOI:10.1063/1.4945658
UR  - https://juser.fz-juelich.de/record/810281
ER  -