| Home > Publications database > Probing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering > print |
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| 024 | 7 | _ | |a 10.1063/1.4945658 |2 doi |
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| 100 | 1 | _ | |a Vrejoiu, I. |0 0000-0003-3196-7313 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Probing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering |
| 260 | _ | _ | |a Melville, NY |c 2016 |b AIP Publ. |
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| 520 | _ | _ | |a Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3films has, however, been little investigated. By temperature-dependent Raman scatteringspectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films. |
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