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@ARTICLE{Schnedler:810284,
      author       = {Schnedler, M. and Dunin-Borkowski, Rafal and Ebert, Ph.},
      title        = {{I}mportance of quantum correction for the quantitative
                      simulation of photoexcited scanning tunneling spectra of
                      semiconductor surfaces},
      journal      = {Physical review / B},
      volume       = {93},
      number       = {19},
      issn         = {2469-9950},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2016-03139},
      pages        = {195444},
      year         = {2016},
      abstract     = {Photoexcited scanning tunneling spectroscopy is a promising
                      technique for the determination of carrier concentrations,
                      surface photovoltages, and potentials of semiconductors with
                      atomic spatial resolution. However, extraction of the
                      desired quantities requires computation of the electrostatic
                      potential induced by the proximity of the tip and the tunnel
                      current. This calculation is based on an accurate solution
                      of the Poisson as well as the continuity equations for the
                      tip-vacuum-semiconductor system. For this purpose, the
                      carrier current densities are modeled by classical drift and
                      diffusion equations. However, for small tip radii and highly
                      doped materials, the drift and diffusion transport model
                      significantly overestimates a semiconductor's carrier
                      concentration near the surface, making the quantification of
                      physical properties impossible. In this paper, we apply
                      quantum correction to the drift and diffusion model, in
                      order to account for the so-called quantum compressibility,
                      i.e., reduced compressibility of the carrier gas due to the
                      Pauli principle, in the region of the tip-induced band
                      bending. We compare carrier concentrations, potentials, and
                      tunnel currents derived with and without quantum correction
                      for GaN(101¯0) and GaAs(110) surfaces to demonstrate its
                      necessity.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000376920400016},
      doi          = {10.1103/PhysRevB.93.195444},
      url          = {https://juser.fz-juelich.de/record/810284},
}