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@INPROCEEDINGS{Durini:810323,
      author       = {Durini, Daniel},
      title        = {{S}ilicon based photodetection in science: challenges and
                      perspectives},
      reportid     = {FZJ-2016-03174},
      year         = {2016},
      abstract     = {The entire silicon based imaging industry evolved around
                      the concept of charge-coupled devices (CCD) [1] introduced
                      in 1969. In parallel to the development of the CCD
                      technology, in the 1990’s and 2000’s the entire CMOS
                      based microelectronic industry was making huge advances in
                      what the processing technology is concerned. In the early
                      1990s, huge efforts were first started to take advantage of
                      this highly developed process technology to try to create
                      highly functional single-chip image sensors where low cost,
                      high yield, and the possibility of inclusion of in-pixel
                      intelligence and on-chip signal processing – an electronic
                      camera-on-a-chip [2] – was the driving factor. Reaching
                      the 2010’s, instead of having CMOS processes that deliver
                      highly functional logic circuitry with quite bad front-end
                      photosensing performance, most foundries started investing
                      in the development of photosensitivity enhanced processes
                      still capable of delivering a quite acceptable CMOS
                      functionality. Near single photon counting with picosecond
                      time resolution has been one of the main breakthroughs of
                      the last couple of years. This was achieved in the form of
                      single-photon counting avalanche diodes (SPADs) [3] and
                      Silicon Photomultipliers (SiPMs) [4]. They are realized
                      nowadays in advanced CMOS technologies. Nevertheless, higher
                      readout speeds, single-photon counting capabilities, higher
                      fill-factors, and higher sensitivities are all issues not
                      easy to be solved using standard planar technologies.
                      Moreover, extending the spectra of the radiation to be
                      detected beyond the visible spectra becomes only possible if
                      different materials are used that are not necessarily
                      compatible with the CMOS technology. Currently, hybrid and
                      3D photodetector technologies are being developed to address
                      these challenges “using the best from several worlds”.
                      But many technical hurdles still need to be addressed. All
                      these developments opened the possibility of using silicon
                      based photodetectors in different scientific applications
                      ranging from spectroscopy, positron emission tomography,
                      neutron detection, or photon science to particle physics.
                      The technological challenges and future perspectives of
                      different silicon based photodetection technologies will be
                      introduced based on several examples.References:1. Amelio G.
                      F. et al. “Experimental verification of the charge coupled
                      device concept”, Bell Syst. Tech. Journal, 49 (4), 593 –
                      600 (1970)2. Fossum E. R. “CMOS image sensors: electronic
                      camera-on-a-chip”, IEEE IEDM Tech. Digest, 17 – 25
                      (1995)3. Cova S. et al. “Towards picosecond resolution
                      with single-photon avalanche diodes”, Rev. Sci. Instr.,
                      52, 408 (1981)4. Gasanov A. et al. “Avalanche Detector”,
                      Russian patent No. 1702831 (1989)5. Durini D. and Arutinov
                      D., „Chapter 2: Operational principles of silicon image
                      sensors” in High Performance Silicon Imaging, Ed. Durini
                      D., Woodhead Publishing Ltd. an imprint of Elsevier, UK, p.
                      25 - 77 (2014)},
      month         = {Jun},
      date          = {2016-06-06},
      organization  = {2016 EMN Photodetectors Meeting,
                       Cancún (Mexiko), 6 Jun 2016 - 9 Jun
                       2016},
      subtyp        = {Invited},
      cin          = {ZEA-2},
      cid          = {I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {632 - Detector technology and systems (POF3-632)},
      pid          = {G:(DE-HGF)POF3-632},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/810323},
}