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@ARTICLE{Rodenbcher:810832,
      author       = {Rodenbücher, C. and Hildebrandt, E. and Szot, K. and
                      Sharath, S. U. and Kurian, J. and Komissinskiy, P. and
                      Breuer, Uwe and Waser, R. and Alff, L.},
      title        = {{H}afnium carbide formation in oxygen deficient hafnium
                      oxide thin films},
      journal      = {Applied physics letters},
      volume       = {108},
      number       = {25},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-03415},
      pages        = {252903 -},
      year         = {2016},
      abstract     = {On highly oxygen deficient thin films of hafnium oxide
                      (hafnia, HfO2− x) contaminated with adsorbates of carbon
                      oxides, the formation of hafnium carbide (HfCx) at the
                      surface during vacuum annealing at temperatures as low as
                      600 °C is reported. Using X-ray photoelectron
                      spectroscopy the evolution of the HfCx surface layer related
                      to a transformation from insulating into metallic state is
                      monitored in situ. In contrast, for fully stoichiometric
                      HfO2 thin films prepared and measured under identical
                      conditions, the formation of HfCx was not detectable
                      suggesting that the enhanced adsorption of carbon oxides on
                      oxygen deficient films provides a carbon source for the
                      carbide formation. This shows that a high concentration of
                      oxygen vacancies in carbon contaminated hafnia lowers
                      considerably the formation energy of hafnium carbide. Thus,
                      the presence of a sufficient amount of residual carbon in
                      resistive random access memory devices might lead to a
                      similar carbide formation within the conducting filaments
                      due to Joule heating.},
      cin          = {PGI-7 / ZEA-3 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000379039900026},
      doi          = {10.1063/1.4954714},
      url          = {https://juser.fz-juelich.de/record/810832},
}